CY14B104N-BA20XIT Allicdata Electronics
Allicdata Part #:

CY14B104N-BA20XIT-ND

Manufacturer Part#:

CY14B104N-BA20XIT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 4M PARALLEL 48FBGA
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 1...
DataSheet: CY14B104N-BA20XIT datasheetCY14B104N-BA20XIT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)
Base Part Number: CY14B104
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CY14B104N-BA20XIT is one of the most popular types of memory storage devices in the market. It is a type of non-volatile memory, meaning that data stored on it will remain there even when power to the device is removed. This makes the device ideal for a wide range of applications, such as data storage and data archiving applications. It is also used in many embedded systems and medical, industrial, and automotive applications.

CY14B104N-BA20XIT memory is a type of Flash memory, which is an electronic non-volatile computer memory. It is based on the floating-gate transistor, which is a type of insulated-gate field-effect transistor (IGFET) with a thin layer of insulation between the gate electrode and the channel. This insulation allows the gate coil to store an electrical charge, and when it is discharged the transistor turns on or off depending on the voltage applied across it.

The CY14B104N-BA20XIT device is a type of Multi-Level Cell (MLC) NAND Flash Memory. MLC NAND Flash Memory is a type of memory cell that can store multiple individual bits of data. These bits are stored in separate cells and can contain 0, 1, 2, 3 or 4 bits each. This means that each cell can store up to 4 bits per cycle. As a result, the device can store a large amount of data in a small package, making it ideal for embedded applications.

The working principle of the CY14B104N-BA20XIT memory is based on the floating-gate transistor. When a voltage is applied to the device, the charge stored on the floating gate will be disturbed and the transistor will either turn on or off depending on the voltage. This allows the device to read and/or write data to and from the memory. It can also be used as a source of ROM (Read-Only Memory).

CY14B104N-BA20XIT memory is widely used in a variety of applications due to its non-volatile storage capability and its high-speed data transfer. It is used in industrial and automotive control systems, embedded systems, data storage and data archiving applications, and medical applications. It has also seen increasing use in consumer products such as digital cameras, music players, and portable media players. The device is also suitable for use in embedded applications such as in medical electronics, automotive ECUs, and avionics.

In summary, CY14B104N-BA20XIT is a type of non-volatile Multi-Level Cell (MLC) NAND Flash Memory. It is based on a floating-gate transistor and can store multiple bits in each memory cell. The device is used in a variety of applications due to its non-volatile storage capability and its high-speed data transfer. It is widely used in industrial and automotive control systems, embedded systems, data storage, and data archiving applications.

The specific data is subject to PDF, and the above content is for reference

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