CY14B104N-BA45XI Allicdata Electronics
Allicdata Part #:

CY14B104N-BA45XI-ND

Manufacturer Part#:

CY14B104N-BA45XI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 4M PARALLEL 48FBGA
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 1...
DataSheet: CY14B104N-BA45XI datasheetCY14B104N-BA45XI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)
Base Part Number: CY14B104
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CY14B104N-BA45XI is a quad-bit volatile static RAM. This type of memory is used in both data storage and processing applications. As such, it can be found in a variety of electronic devices, including computers, smartphones, tablets, set top boxes, and more. In order to understand how this type of product works and the applications it can support, it is important to examine its operation, design, and features.

At a basic level, the CY14B104N-BA45XI is a 4-bit volatile static RAM. It is usually made up of an array of cells, each of which stores one bit of data. These cells are organized into groups known as words, and each word can store up to four bits of data. The cells are held in a fixed configuration, allowing the RAM to store data permanently until it is purposefully erased. Data is written and read from the memory using pins called address lines and data lines.

In terms of design, the CY14B104N-BA45XI is manufactured using CMOS technology. This ensures a low-power consumption and high speed performance. It is available in different packages, including a Dual-In-Line (DIL) configuration, SOJ packages, and surface mount packages such as PLCC, LQFP, and more. For added flexibility, the device can be electrically erased. This means that data can be erased even when the device is connected to other electronics.

The application fields for the CY14B104N-BA45XI are diverse and varied. Due to its low power consumption, it is ideal for use in battery powered devices such as portable computers. It is also well suited to use in mobile phones, PDA\'s, and related applications. Furthermore, its high speed performance makes it an attractive option for memory management, graphics processing, audio playback, and more.

In terms of working principle, the CY14B104N-BA45XI is designed to store and process data and instructions. When a signal is sent to the memory, it will read the data stored in the cells and write it to the output pins. Similarly, when data needs to be written to the memory, the signal will activate the appropriate cells and write the data to them. This process is carried out very quickly, allowing the RAM to process information at high speeds.

The CY14B104N-BA45XI is an excellent option for those who require fast and reliable memory solutions. Its low power consumption, high speed operation, and flexible design make it a great choice for multiple applications. Furthermore, its ability to be electrically erased makes it a highly versatile device capable of supporting a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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