CY14B104NA-ZS25XIT

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CY14B104NA-ZS25XIT is a type of memory, used by many industries in multiple application fields. It is significantly smaller than traditional memories such as Flash or EPROM, making it suitable for use in space constrained environments, such as wearables and IoT devices.

The memory features an 80-MHz clock rate which translates to a cycle speed of 10 million instructions per second. It also has 4-bits of addressable storage, meaning 4 bits can be simultaneously addressed and referenced. This makes the memory very efficient in terms of the speed that it can store and access data, allowing fast random access.

The memory device discussed here is based on an E2 technology, allowing it to store data from very low amounts of energy and a minimum of storage space. This makes it especially suitable for contemporary applications, as it can be used for various kinds of embedded applications. The device also offers an unlimited number of program executions, meaning that its capacity can be used staggeringly large amounts of data and programs. Furthermore, the memory offers serial interface through which the data is uploaded, maximize system performance.

As far as the working principle is concerned, the memory device is based on dynamic random-access memory (DRAM) technology. In DRAM cells, data is stored by trapping electric charges in oxide-insulated transistors and capacitors whose values can later be scanned, thus recalled. In order to read a memory cell, a bit line and a word line are activated to control the flow of electrons into the cell. This creates a potential difference between the bit line and the word line to create a small electrical current in the memory cell, which is then read as a 0 or a 1.

CY14B104NA-ZS25XIT is also capable of writing data to memory. This process is similar in concept to reading data; when writing, both bit lines and word lines are activated in order to control the flow of electrons when into the memory cell. However, in this job the potential difference between the bit and word lines are adjusted so the memory cell stores the designated 0 or 1. This can be repeated for each memory cell in the memory in order to store a bit of data.

All in all, the CY14B104NA-ZS25XIT is an energy-efficient memory device that offers an array of applications in various industries. Its compact size and fast access time make it especially suitable for embedment in systems and devices that require data storage that is both energy efficient and fast. The device is based on DRAM technology and operates on the principle of controlling the flow of electrons between cells.

The specific data is subject to PDF, and the above content is for reference