Allicdata Part #: | CY14B116N-BZ25XI-ND |
Manufacturer Part#: |
CY14B116N-BZ25XI |
Price: | $ 58.75 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 16M PARALLEL 165FBGA |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 16Mb (1M x 16... |
DataSheet: | CY14B116N-BZ25XI Datasheet/PDF |
Quantity: | 70 |
1 +: | $ 53.40510 |
10 +: | $ 48.07280 |
25 +: | $ 47.02470 |
50 +: | $ 46.04040 |
105 +: | $ 40.29330 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 16Mb (1M x 16) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (15x17) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CY14B116N-BZ25XI is a common memory device that is used in many of today\'s systems. Its uses are vast, ranging from data storage to cache applications. In this article, we\'ll take a look at the application field and working principle of this memory device.
Let\'s start by looking at what application fields the CY14B116N-BZ25XI is suitable for. Generally speaking, this memory device is used for a variety of storage and caching needs. It is often used as a data storage device for a variety of applications, including computers and embedded systems. Additionally, it can be used as a cache memory device, which is especially useful when quick access to frequently used data is necessary.
The CY14B116N-BZ25XI is a low-power memory device that offers excellent performance and efficiency. At the heart of this device is the SDRAM (Synchronous Dynamic Random Access Memory) technology. The device is designed with a variable-latency feature, which allows it to adapt to varying access requirements, thereby providing high performance when needed and low power consumption when not.
When it comes to working principle, the CY14B116N-BZ25XI employs a number of core technologies. First and foremost, it utilizes SDRAM technology, which provides fast and reliable access to data. Additionally, the device is built around an on-chip clock multiplier circuit. This circuit is responsible for producing the device\'s high level of performance. Finally, the device uses a pre-fetch architecture to ensure increased performance when necessary.
In addition to the core technologies mentioned above, the CY14B116N-BZ25XI also features several useful features. These features include ECC (Error Correction Code) support, which provides data integrity; write protect, allowing users to protect data from accidental deletion; and hardware interfaces, allowing for connections to various hardware devices.
The CY14B116N-BZ25XI is a powerful memory device that is suitable for a large variety of applications. With its SDRAM technology, variable-latency feature, and other features, it is able to provide quick access to data while remaining efficient and reliable.
The specific data is subject to PDF, and the above content is for reference
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