CY14B116S-BZ25XIT

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an important element for almost any electronic system or application. It is used to store data and instructions and allows the electronic system to maintain memory or gather information. The CY14B116S-BZ25XIT is a serial Static Random Access Memory (SRAM) device from Cypress Semiconductor that is designed for use in a variety of applications, which makes it ideal for many applications.The CY14B116S-BZ25XIT is a 1Mbit memory device, which features a low operating voltage range of 3.0 to 3.6V and a 512K-word X 8-bit to 1024K-word X 8-bit configuration. The device is available in a 44-pin TSOP-II package, making it easier to install in tight spaces. Its high-performance features include a fast random access time of 70 nanoseconds (max), a maximum clock frequency of 20MHz, and an endurance of 10,000 Write/Write cycles. It also has an asynchronous page-mode feature that allows multiple memory locations to be accessed within a single cycle.The CY14B116S-BZ25XIT has a wide range of applications, including FPGAs, consumer electronics, embedded systems, and industrial applications. The device can be used to store temporary data and instructions that are needed for a program to execute. It can also be used in applications where fast random access time is required, such as in audio and video systems that require instant access to stored data. In addition, it can be used for buffering data transfers for high-speed data transfer applications.The working principle of the CY14B116S-BZ25XIT is based on a static RAM cell. A static RAM cell consists of two transistors and a capacitor. When the transistor of the static RAM cell is in a “pass-on” state, a low voltage is applied to the capacitors’ gate. When the voltage is increased, the capacitors’ charge turns off and the memory cell is reset. To write data to the memory cell, a higher voltage is applied and the write operation is completed. To read data from the memory cell, the voltage is again increased and the data is then retrieved. The process of writing and reading data is repeated until the information is stored in the memory cell.The CY14B116S-BZ25XIT provides the required speed, endurance and configuration that makes it ideal for a variety of applications. The device supports a wide range of operating voltages, high endurance, and a fast random access time. These features make the device suitable for embedded applications, consumer electronics, and industrial applications. In addition, its asynchronous page-mode feature allows multiple memory locations to be accessed within a single cycle, making it ideal for applications where data transfer speed is critical.Overall, the CY14B116S-BZ25XIT is an ideal choice for use in a variety of electronic applications. It provides the speed, endurance and configuration required for many applications, allowing for efficient use of memory and data processing. The device is available in a 44-pin TSOP-II package, making it easier to install in tight spaces. In addition, its asynchronous page-mode feature allows multiple memory locations to be accessed within a single cycle, making it ideal for applications where data transfer speed is critical. With its wide range of applications and features, the CY14B116S-BZ25XIT surpasses the requirements of many electronic systems and applications.

The specific data is subject to PDF, and the above content is for reference