CY14V101QS-SE108XQT

CY14V101QS-SE108XQT Memory

The CY14V101QS-SE108XQT is a multifunctional integrated dynamic RAM. It is a high-performance device designed to address a variety of needs in memory intensive applications .

Application Fields

The CY14V101QS-SE108XQT is mainly used in consumer electronics and embedded systems. They are extensively used in digital TVs, mobile devices, automobiles, industrial control and other embedded systems where high-speed, low-power and miniaturization requirements are met.

The low power feature of this memory allows for handing high performance tasks like video processing and graphics, effectively extending the battery life of consumer devices. Furthermore, the CY14V101QS-SE108XQT is designed with a 5V operating voltage making it suitable for a wide range of industrial environments. Additionally, the device can be used in a wide range of temperature conditions, from -40C to +90C.

Working Principle

At the core of the CY14V101QS-SE108XQT is a 256Kb DRAM. This includes a 1024X256 interface consisting of 256 bytes per row. Allowing the memory to handle a wide range of operational profile, from low power and short bursts of accesses to more intensive work that may involve frequent refreshing of the memory. The DRAM chip is conformed by an array of cells that are composed of a single transistor and a capacitor, with each cell corresponding to a bit of data (i.e. 0 or 1). When the transistor is closed, it charges the capacitor, indicating a 0, while an open transistor means a 1.

The RAS (Row Access Strobe) pins from the CY14V101QS-SE108XQT allow for stimulation of the row to be read or written so the data can be transferred between the RAM and the outside components. Once the cells are selected the CAS (Column Access Strobe) pins can be used for the actual data transfer. This is done by allowing the charge of the capacitor cells to interfere in the data lines.

Cache and Refresh Settings

The CY14V101QS-SE108XQT features an advanced cache and refresh mechanism. The device is capable of automatically refreshing the data with an adjustable time frame, thus reducing the time spent by the system on refreshing the memory. Additionally, the built-in cache allows the device to effectively handle high-speed transactions, effectively lowering the access time of memory requests.

Conclusion

The CY14V101QS-SE108XQT is a high-performance memory device designed to address various needs in memory intensive applications. It features a high-speed DRAM 256Kb with a 1024X256 bits interface, a 5V operating voltage and a wide temperature range, from -40C to +90C. Additionally, the device has a built-in cache and refresh mechanism, making it suitable for high performance tasks.