CY62147G30-45BVXAT

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CY62147G30-45BVXAT is a type of Volatile Static Random Access Memory (SRAM) integrated circuit with an asynchronous interface. It is a non-volatile memory device that uses memory modules to store data. It is commonly used in embedded and mobile applications where there is a need for low power consumption and data retention at low temperatures.

This 8-Mb SRAM device is ideal for applications that require low voltage, low power consumption, and low operating temperature. It operates at 2.4 volts and supports temperatures from -40°C to 85°C. This memory device can sustain up to 125 million cycles of write and read operations.

The working principle of CY62147G30-45BVXAT volatile static random access memory (SRAM) is based on utilizing a polarized capacitor to store a single bit of information on a memory module. When the memory device is powered on, the capacitor stores a “1” or a “0” depending on whether the current passing through it is “on” or “off”. On each refresh cycle, the memory module refreshes the information stored and makes sure that it remains intact and accurate.

The main applications of CY62147G30-45BVXAT include automotive, computing, gaming, industrial control, network, storage, and telecommunications. It provides a reliable and cost-effective way to store data. It is also suitable for use in devices like digital cameras, PDAs, and routers which need to store and quickly retrieve data.

CY62147G30-45BVXAT is a reliable and cost-effective memory device with low power consumption, low voltage, and improved data retention. It is a non-volatile memory chip and can be used in applications that require data retention at low temperatures. It is suitable for embedded and mobile applications, automotive applications, gaming, industrial, telecommunications, and storage applications. Its working principle is based on the utilization of a polarized capacitor to store a single bit of information on a module.

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