Allicdata Part #: | CY62148VNLL-70ZSXI-ND |
Manufacturer Part#: |
CY62148VNLL-70ZSXI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 4M PARALLEL 32TSOP II |
More Detail: | SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral... |
DataSheet: | CY62148VNLL-70ZSXI Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-SOIC (0.400", 10.16mm Width) |
Supplier Device Package: | 32-TSOP II |
Base Part Number: | CY62148 |
Series: | MoBL® |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
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Memory
CY62148VNLL-70ZSXI is a low-voltage, high-density static random access memory (low-voltage SRAM). It is a type of integrated circuit which stores data in a nonvolatile, static form. The main purpose of the CY62148VNLL-70ZSXI device is to rapidly store, retrieve, and reset large amounts of data in a nonvolatile form, meaning it can hold onto data without any external power supply needed.
Application Field
CY62148VNLL-70ZSXI is widely used in instrumentation systems, wireless base stations, consumer electronics products, telecommunications and industrial systems, automotive applications, gaming systems, and embedded control systems. It can also be used in applications such as switch fabric, networking, and high-end server and storage systems. The device is designed to enable the transfer of data between different memory types, such as SRAM, DRAM, NAND, NOR, and flash. It is also used in MIL_STD-1553B Memories.
Working Principle
The CY62148VNLL-70ZSXI device operates by utilizing 6-transistor SRAM cells, which use six-transistor and 12-capacitor devices, respectively. The data is stored using the MOS transistors where the logic state of the bit is determined by the activation or deactivation of the transistor and the capacitor is used to hold the charge associated with the logic state. The data is written and read from the memory cells using the write and read enable pins. When the write enable is on, the data present on the input pins is written to the selected memory cells. Similarly, when the read enable is on, the data from the selected cells is output onto the data pins.
The CY62148VNLL-70ZSXI device provides data reliability and fast access time for memory systems operating at low power. It also provides error checking and correction (ECC) techniques for data integrity. Furthermore, the device enables power-down and power-up operations without loss of data.
In summary, the CY62148VNLL-70ZSXI device is an excellent SRAM memory solution, providing fast access time, low power consumption and data reliability. It is an ideal choice for a wide range of both consumer and industrial applications. It is also available in a variety of densities, allowing customers to choose a device that is right for their design.
The specific data is subject to PDF, and the above content is for reference
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