Allicdata Part #: | 428-1153-ND |
Manufacturer Part#: |
CY7C019V-15AC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 1.152M PARALLEL 100TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 1.152Mb (... |
DataSheet: | CY7C019V-15AC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 1.152Mb (128K x 9) |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 15ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
Base Part Number: | CY7C019 |
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Memory
CY7C019V-15AC is a type of nonvolatile memory from Cypress Semiconductor Corporation. It has two separate ares, an SRAM array and a NVRAM array. In terms of its application fields, CY7C019V-15AC is commonly used in embedded systems, consumer electronics, automotive electronics, enterprise storage, military and aerospace application and other applications.
Working Principle
The CY7C019V-15AC has 16K x 8 bit of SRAM which is divided into 4 independent memory banks. Nonvolatile area is divided into 128 blocks of 128 bytes and each bank has 64 blocks of 128 bytes. All write cycles in the SRAM area are performed using RapidWrite technology, which is faster than typical single-bit memory write capability. The NVRAM area implements Ferroelectric RAM, which is a type of non-volatile random access memory that stores data in ferroelectric films. This technology allows for double byte write cycles with no delay to write data. The entire array is covered by 512 bytes of ECC bytes.
The CY7C019V-15AC provides several different commands that allow the user to access the memory. Read cycles work the same way regardless of whether the SRAM or the NVRAM area is accessed. The RapidWrite technology achieves faster write cycles by latching the data from the first write cycle and then allowing the user to initiate a second write cycle to complete the transaction. This technique is more efficient for writing large chunks of data as it reduces the amount of time the user has to wait for the write cycle to complete.
The CY7C019V-15AC also provides several features that enhance its overall performance. One of these features is the ability to select the write strength of the memory for specific applications. This allows the user to select the right speed without sacrificing reliability and endurance of the device. In addition, the device has a built-in power-down timer that will automatically enter power-down mode after a certain period of inactivity. This helps to extend the overall battery life of the device.
Overall, the CY7C019V-15AC is a versatile and reliable nonvolatile memory device that can be used in a variety of applications. Its wide range of features make it suitable for a wide range of tasks, ranging from embedded applications to enterprise storage solutions. Additionally, its RapidWrite technology ensures faster writes and lower power consumption, allowing users to extend their battery life.
The specific data is subject to PDF, and the above content is for reference
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