CY7C1565KV18-400BZXI

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CY7C1565KV18-400BZXI is a type of static random access memory (SRAM) that holds data even when there is no power, making it a non-volatile type of memory. It has been specifically designed with low-power applications, such as cell phones and digital equipment, in mind and features low power consumption and minimal power dissipated during operation. It is also designed to be used together with other devices in an integrated system, as it utilizes fewer pins than other SRAMs.

The CY7C1565KV18-400BZXI SRAM is composed of two arrays of memory cells, each having an access time of 8ns. It is organized in a three-way aspect and comes with an active-low write enable. This feature allows the user to minimize power consumption, as the power consumption can be adjusted while writing to the memory. In addition, the CY7C1565KV18-400BZXI SRAM also has an on-chip decoder and sense amplifier, streamlining the use of this SRAM in an integrated system.

The CY7C1565KV18-400BZXI SRAM offers a wide variety of application fields and is used in many different electronic devices. It can be found in smart phones, digital cameras and audio players. It is also commonly used in cell phones for fast storage and retrieval of data. In addition, it is also used in removable media storage devices, such as USB thumb drives and memory cards. Furthermore, with its low power consumption and low voltage requirements, it is well suited for use in battery-powered equipment.

The CY7C1565KV18-400BZXI SRAM operates in the same manner as other static random access memories. It is built from two arrays of memory cells, each having an access time of 8ns. Each memory cell contains a storage element, either a flip-flop or a transistor, which is used to store the data. When a voltage is applied to the cell, an electric field is generated, which activates the transistor or flip-flop, allowing data to be stored. When a different voltage is applied, the flip-flop or transistor is deactivated and the data is no longer stored.

When the data is to be stored in the CY7C1565KV18-400BZXI SRAM, the data must first be loaded into a latch, which is a type of register, and then provided with the necessary addresses. The addresses are provided by the user, through an address bus, and the data is loaded with a write enable signal. The data is then stored in the cells that are addressed by the signals sent by the user. When the user wants to retrieve the data, a read enable signal is sent, allowing the data to be retrieved from the addressed cells.

The CY7C1565KV18-400BZXI SRAM is an ideal choice for applications that require non-volatility and low power consumption, such as cell phones and digital equipment. It is also ideal for use in battery-powered devices, as it requires a low voltage to operate. The on-chip decoder and sense amplifier make this SRAM perfect for use in an integrated system, while its low access time makes it suitable for fast data storage and retrieval.

The specific data is subject to PDF, and the above content is for reference