CY7C1474V25-200BGXI

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is the fundamental element for the operation of a computer. It can store data or instructions and provide the computer with computing resources. CY7C1474V25-200BGXI is one of the commonly used memories. So what does it mean and what fields does it apply to? Let\'s take a look.

CY7C1474V25-200BGXI is a baseband memory that meets advanced performance requirements. It is a dual-port SRAM product specifically designed to meet the system requirements of dual-port application systems. It has very large storage capacity, the specific capacity is 4M x 18 bit, and the work frequency can reach up to 200MHz, so it can meet almost all scenarios with higher performance requirements. At the same time, this product adheres to the same high level of process quality as the highest quality standards in field production.

At the same time, this product also supports asynchronous access mode and execute-in-place modes. This means that the product can be used on the same high-speed data bus as other high-speed memory devices. Asynchronous mode allows the CY7C1474V25-200BGXI to insulate the processor from the memory bus, so that direct communication is made possible. The execute-in-place mode allows instructions to be loaded directly from the memory device, eliminating the need for program loading from a separate memory device.

In addition, CY7C1474V25-200BGXI can also be used in systems such as medical equipment, industrial robots and Internet of Things. With its fast speed and large memory capacity, it can provide the rapid running speed, system control accuracy and product data control required by industrial equipment, while satisfying the large amount of data storage required by medical equipment.

Working principle of CY7C1474V25-200BGXI can also be divided into two parts: static random access memory and dynamic random access memory. Static random access memory uses a static transistor to store charge in its gate when power is turned off, while dynamic random access memory stores data by periodically refreshing its memory cells. Each cell contains a single transistor and a capacitor. The data is stored in the transistor and when the power is turned off, the data will be lost.

In summary, the CY7C1474V25-200BGXI dual-port SRAM product is highly parameterized, allowing memory products to meet the requirements of various application systems. It has fast speed and large capacity, and also supports asynchronous and execute-in-place access modes. It has a wide range of application fields and works on the principle of static and dynamic random access memory.

The specific data is subject to PDF, and the above content is for reference