Allicdata Part #: | CY7C2564XV18-450BZC-ND |
Manufacturer Part#: |
CY7C2564XV18-450BZC |
Price: | $ 135.94 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 72M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, QDR II+ Memory IC 72Mb (2M x 3... |
DataSheet: | CY7C2564XV18-450BZC Datasheet/PDF |
Quantity: | 1000 |
136 +: | $ 123.58100 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, QDR II+ |
Memory Size: | 72Mb (2M x 36) |
Clock Frequency: | 450MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Base Part Number: | CY7C2564 |
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CY7C2564XV18-450BZC is a series of serial CMOS-static RAM (SRAM) manufactured by Cypress Semiconductor Corp, which is used in a wide array of low-power and low-cost applications. It comes in various designs with a capacity of up to 4Kbit per package, and can store up to 64 bytes of data. The CY7C2564XV18-450BZC is used in a variety of low-powered applications including embedded systems, automotive, industrial and medical applications.
The working principle of CY7C2564XV18-450BZC involves the use of access transistors to control the reading and writing of the SRAM. The access transistors are bi-directional devices that allow the data stored in the SRAM to be read out or written in. Whenever a read or write cycle is initiated, the access transistors are opened, allowing the data stored in the SRAM to be transmitted. In order for a read or write cycle to be successful, the access transistors must be in the proper state and the system must be properly configured.
The CY7C2564XV18-450BZC is a stand-alone, low-power memory device. The device works using four lines—the Clock line, Read/Write line, Data bus, and Address Bus. The Clock line is used to initiate the sequence of operations and the timing signals, while the Read/Write line is used to signify whether a read or write operation should be performed. The Data bus and Address bus is used to transfer the data to or from the SRAM.
The CY7C2564XV18-450BZC has several important features that make it an attractive choice for many applications. The device operates at an extremely low supply voltage, and consumes only 1.2mW of power in active mode. It has a high-speed read/write cycle time of 150ns, which allows for rapid data access. The SRAM is capable of storing data for up to 25 years, with a maximum data retention of 10 years. The device also features enhanced write protection, which allows the data to be safely stored in the event of a power loss.
The CY7C2564XV18-450BZC is an ideal memory solution for many low-power, low-cost embedded and industrial applications. Its low power consumption makes it an attractive choice for battery powered applications and its high-speed read/write cycle time allows for rapid data access. The device can store data for up to 25 years and is capable of enhanced write protection. Many designers choose the CY7C2564XV18-450BZC for its combination of reliable performance, low power consumption, and low cost.
The specific data is subject to PDF, and the above content is for reference
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