CY7C1474V33-200BGC

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CY7C1474V33-200BGC is a memory component used in a wide range of applications. It is a Static Random Access Memory (SRAM) device, which is a non-volatile memory technology designed to store data without the need for a continuous flow of electricity. The device provides flexibility and high speeds in a compact form factor. It features a x8 configuration and is available in several densities ranging from 512K to 2M bits. The device has two power supply options, 2.7V and 3.3V. Two output styles, asynchronous and synchronous, are available.

CY7C1474V33-200BGC is widely used in Applications such as Embedded DSP, Networking, Automotive, Security, and Industrial Automation. It is also used for data latching and buffering, video/audio pipe-lining, as well as for other general DRAM/SRAM applications. Its flexibility and performance makes it suitable for high-end applications.

The device combines a synchronous operation, high performance and high speed in one package. It is based on a dual-256K-bit array technology, with two active memory banks. The device has an access time of 10ns and a 3.3V operation. It has an asynchronous output which enables fast data access. The interface is simple and easy to use, with a set of well-defined control signals. It also includes an on-chip circuitry for overclocking up to 200MHz.

The CY7C1474V33-200BGC device offers a variety of safety and reliability features to ensure that data is secure. It includes an on-chip oscillator which allows for a wide range frequency range, up to 200MHz. There is also an on-chip ESD protection and thermal protection to ensure safety and security. In addition, a power down mode reduces power consumption when not in use.

The working principle behind the device is quite straightforward. Data is written to a single location and stored until it is read by the user. The device has an internal memory array, with the two banks defined as ‘read banks’ and ‘write banks’. Data is written to a specific location in the write bank, and then transferred to its corresponding location in the read bank. By providing two separate banks for read and write, the device can store up to 256K bits. The device also includes an on-chip ECC (Error Correction Code) which can detect and correct any single-bit errors.

In summary, the CY7C1474V33-200BGC is a low-power, high-performance memory solution for a wide range of applications. With its x8 configuration, asynchronous and synchronous outputs, built-in protection features and on-chip ECC, the device provides flexibility and security. The device is easy to use and provides fast access to data, making it a great choice for embedded and industrial applications.

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