Allicdata Part #: | CY7C25652KV18-400BZC-ND |
Manufacturer Part#: |
CY7C25652KV18-400BZC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 72M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, QDR II+ Memory IC 72Mb (2M x 3... |
DataSheet: | CY7C25652KV18-400BZC Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, QDR II+ |
Memory Size: | 72Mb (2M x 36) |
Clock Frequency: | 400MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Base Part Number: | CY7C25652 |
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CY7C25652KV18-400BZC is a Flash Automotive Memory device under the Memory category, manufactured by Cypress Semiconductor Inc. This memory device has many features such as two times the density, a robust design, and an ultra-low voltage rating of 1.8 volts.
CY7C25652KV18-400BZC is specifically designed for automotive applications, as it offers features such as high reliability and low power. This device is made of the low-cost 90nm process technology and delivers up to 400 million write/erase cycles guaranteed, meeting the requirements of the most demanding automotive applications.
The device provides cached programming, which ensures fast and reliable programming of automotive ECUs. Furthermore, users also have the option to enable power fail protection for their application using the industry-leading PowerFail scheme.
The CY7C25652KV18-400BZC offers additional features, such as hardware encryption and 128-bit Advanced Encryption Standard (AES-128) for data security, Electronic Signature for authentication purposes and Dual-Bit Error Correction (DBEC) for improved reliability and endurance. Packaged in the low pin-count Quad Flat No-lead (QFN) package, this device is an ideal solution for the automotive industry.
With regard to the working principle of CY7C25652KV18-400BZC, this memory device has a non-volatile memory cell array — consisting of memory cells that are programmed and erased at the bit level — in which data can be stored with a retention cycle of more than 10 years at a temperature of 85°C. Additionally, it has a level-shifting circuit that converts the input voltage (1.8V - 3.6V) to the power supply voltage of the internal logic. Cypress Semiconductor mentions that they use a dut pin to configure the memory device according to the system requirements.
In summary, CY7C25652KV18-400BZC Flash Automotive Memory is an ideal device for automotive applications, offering maximum performance and data security under the Memory category. With its low power consumption, robust design, and advanced features, it provides a reliable and cost-effective memory solution.
The specific data is subject to PDF, and the above content is for reference
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