Allicdata Part #: | CY7C1562XV18-366BZXC-ND |
Manufacturer Part#: |
CY7C1562XV18-366BZXC |
Price: | $ 118.21 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 72M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, QDR II+ Memory IC 72Mb (4M x 1... |
DataSheet: | CY7C1562XV18-366BZXC Datasheet/PDF |
Quantity: | 1000 |
136 +: | $ 107.46200 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, QDR II+ |
Memory Size: | 72Mb (4M x 18) |
Clock Frequency: | 366MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Base Part Number: | CY7C1562 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory
The CY7C1562XV18-366BZXC is a 3968-bit 10k-word nonvolatile voltage mode static random access memory (SRAM) device. Manufactured using high performance CMOS technologies, it offers ultra-low quiescent power consumption and fast access times. It allows for nonvolatile static storage of the content, making it ideal for applications where a constant data retention is required even under higher ambient temperature.
This memory device is designed to provide designers with a wide variety of solutions in various electronic fields. It is compatible with a wide selection of MCUs and can be used in multiple configurations such as 2-wire or I2C interface. It is well-suited for a broad range of fields such as industrial monitoring, medical device, test & measurement, automotive, and consumer electronics.
The CY7C1562XV18-366BZXC is highly efficient and economical due to its low power consumption, fast access times and high endurance memory solution featuring Data Retention of 10 years at minimum power. It boasts a wide 2 – 5.5V operating voltage range and its flexible voltage control features allow for use in a wide array of commercial systems.
In addition to nonvolatility, the device integrates Error Correction Code (ECC) for data integrity and Bit Error Rate Testing (BERT). It is available in packages of 8 pin SOIC, 8 pin QFN and 10 pin QFN. It also features a 11.2 kbit data register, which is accessible without powering up the memory array, making it ideal for applications where fast data access is required.
The CY7C1562XV18-366BZXC\'s working principle is based on an array of memory cells arranged in a row-column matrix. The device uses sense amplifiers to sense the differential voltage between two memory cells, translating the data stored in the cells into a digital format. The serial data is then transferred to the control logic, which manages the data to and from the memory array.
The advantage of this type of memory device is that it is static and therefore, can store information even when the power is not available. This makes it ideal for applications where a constant data retention is preferred and makes it robust in fluctuating temperatures.
The CY7C1562XV18-366BZXC is a reliable, efficient and low-power memory solution for a variety of applications. Its wide voltage control features and flexibility in configuration make it an ideal choice for any system design where power efficiency and reliability are a priority.
The specific data is subject to PDF, and the above content is for reference
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