CY7C1473BV33-133AXC

CY7C1473BV33-133AXC is a high-performance, low-power Static Random Access Memory (SRAM) device and it has been designed to meet the memory needs of a wide variety of embedded applications. It provides a high-density memory array that can support up to 1MB of program and data storage and it is ideal for use in the most demanding modern embedded designs.

The CY7C1473BV33-133AXC employs the advanced Footprint SRAM architecture that allows the memory to deliver high-performance while consuming very little power. This device is designed to provide reliable and fast performance even under adverse temperatures and is designed to support 7.5ns access times. It is highly configurable and is available in different sizes and densities that allow designers to choose the best combination for their needs.

The CY7C1473BV33-133AXC is offered in commercial (0°C to 70°C) and industrial (-40°C to 85°C) temperature ranges and is housed in a 54-pin Intel TSOP2 type package. This device comes with a variety of options that allow designers to customize it for their specific application requirements, including multiple PBE (prefetch) sizes, multiple SRAM cycle times, and support for burst operations. In addition, this device is also AEC-Q100 compliant and comes with an extended warranty of up to 7 years.

Application Fields

The CY7C1473BV33-133AXC is a highly integrated and configurable SRAM device that is ideal for use in a wide range of embedded designs. It is designed to provide reliable and fast performance even in harsh conditions and is widely used in applications such as industrial automation, medical instrumentation, power electronics, military and aerospace, automotive, and gaming systems.

Working Principle

The CY7C1473BV33-133AXC employs advanced Footprint SRAM architecture that allows it to deliver high performance while consuming very minimal power. This device is designed to store data in the form of integrated memory cells that can be accessed simultaneously. This structure is based upon the principle of accessing the memory cells in parallel and its working principle is the same as that of a parallel memory bus.

The CY7C1473BV33-133AXC can provide up to 1MB of program and data storage and can support 7.5ns access times. This device is highly configurable and is available in different sizes and densities that allows designers to select the best combination for their needs. This device also features multiple PBE sizes, multiple SRAM cycle times, and support for burst operations.

In addition, the CY7C1473BV33-133AXC is equipped with an integrated circuit protection feature that prevents any accidental damage to the system. This feature allows the user to write and read the memory without any risk of data corruption or other unexpected errors. The CY7C1473BV33-133AXC also features a variety of options that allow designers to customize it for their specific needs.

In conclusion, the CY7C1473BV33-133AXC is an advanced and highly configurable SRAM device that is ideal for use in a wide range of embedded designs and applications. Its advanced Footprint SRAM architecture enables high performance while consuming minimal power, and its multiple PBE sizes, multiple SRAM cycle times, and support for burst operations allow designers to customize it for their specific needs. It comes with an integrated circuit protection feature that prevents any accidental damage to the system, and it is available in different sizes and densities that allow designers to select the best combination for their needs.