Allicdata Part #: | CY7C25652KV18-400BZXI-ND |
Manufacturer Part#: |
CY7C25652KV18-400BZXI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 72M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, QDR II+ Memory IC 72Mb (2M x 3... |
DataSheet: | CY7C25652KV18-400BZXI Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, QDR II+ |
Memory Size: | 72Mb (2M x 36) |
Clock Frequency: | 400MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Base Part Number: | CY7C25652 |
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Memory is an essential component of many electronic systems as it is used to store and quickly retrieve information. One type of memory is static random access memory (SRAM), which can access stored data without being recharged or refreshed. CY7C25652KV18-400BZXI is a type of SRAM that can be used in many applications due to its power efficiency and flexibility.
CY7C25652KV18-400BZXI SRAM is a low power, flexibly configured, low voltage CMOS static random access memory device. It has a unique single bank of random access memory (RAM), which offers an extremely efficient RAM usage which results in reduced power consumption. It is a perfect memory solution for many applications, such as digital signal processing, industrial instrumentation, test and measurement, and medical imaging.
The CY7C25652KV18-400BZXI works by using a memory cell array of 128Kx18 bits. Each memory cell is composed of two distinct parts: a pair of access transistors and a flip-flop consisting of two cross-coupled inverters. The two access transistors control the address lines and the data lines. When the address lines are energized, one of the transistors opens and passes the data through to the flip-flop. The flip-flop then stores the data until it is either read or written to.
The memory cell organization of CY7C25652KV18-400BZXI is organized in an "equivalent in-line" structure. Each addressable location within the device is referenced by an address line. As the address lines are activated, the address signal is passed to the memory cell\'s address latch, which then stores the address. Once the address is stored, the data lines can be activated to either write or read from the memory cell.
In addition to its basic memory cell array, CY7C25652KV18-400BZXI also includes several integrated peripheral functions, such as an internal power-on reset and several other functions. These features make this SRAM highly desirable for applications where power consumption needs to be kept to a minimum. In addition, the flexibility of its configuration allows CY7C25652KV18-400BZXI to be used in a variety of applications.
CY7C25652KV18-400BZXI SRAM is a great choice for applications in which power consumption must be kept to a minimum. Its low-power consumption, flexible configuration, and integrated peripheral functions make it an excellent choice for a wide variety of applications. As a result, CY7C25652KV18-400BZXI is increasingly found in industrial instrumentation, digital signal processing, medical imaging, and test and measurement applications.
The specific data is subject to PDF, and the above content is for reference
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