Allicdata Part #: | CY7C0241-25AXCT-ND |
Manufacturer Part#: |
CY7C0241-25AXCT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 72K PARALLEL 100TQFP |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 72Kb (4K ... |
DataSheet: | CY7C0241-25AXCT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 72Kb (4K x 18) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
Base Part Number: | CY7C0241 |
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Memory is an important part of modern computing and embedded systems that allow computers to store and access data quickly. One such memory device is the CY7C0241-25AXCT, a non-volatile, low-power static random access memory (SRAM) device. This device is typically used to store and access large amounts of data in modern computing, especially in embedded systems and other applications where a small size and low power consumption are advantageous. This article will discuss the application fields and working principles of the CY7C0241-25AXCT SRAM device.
The CY7C0241-25AXCT is a low power static random access memory device. It is ideal for use in embedded systems, as it offers good density and performance in a small size and low power package. The device can operate on supply voltages between 1.8V and 3.6V, which is useful when integrating into low-voltage systems. The device can also operate at temperatures ranging from -40°C to +85°C, making it suitable for use in a variety of applications.
The CY7C0241-25AXCT is a 256Kx32 static random access memory device. It has a 256Kx32 configuration, meaning that it has a storage capacity of 8Mbits. The device is organized as 32Kx8 banks of 4K bytes, each of which can be accessed in a single cycle. This makes the device suitable for applications that require large amounts of data to be stored and retrieved quickly and efficiently. The device also features a low-power and low-voltage write cycle, which reduces power consumption and device stress during operation.
The CY7C0241-25AXCT device is commonly used in a variety of applications. It is well-suited for use in embedded systems such as industrial and consumer products, medical devices, and automotive applications. The device can also be used in storage applications such as digital video recorders and solid-state drives, where its low power and small size are advantageous. Additionally, the device can be used in applications that require large amounts of data to be stored and accessed quickly, such as multimedia applications and data processing.
When it comes to the working principle of the CY7C0241-25AXCT device, it is based on the concept of static random access memory (SRAM). Static RAM is memory that does not need regular refreshing in order to maintain its stored data. This is beneficial, as it reduces the need for power-intensive refresh cycles. The device is built using standard CMOS processes, which allow it to maintain its stored data even when the power is off.
When a read or write operation is performed on the device, an address is sent to the memory array. The address then points to a particular cell within the array, which is accessed. The data in the cell can then be read or written depending on the operation requested by the user. These operations are performed in a single cycle, allowing high levels of speed and performance.
The CY7C0241-25AXCT is a low power, high density static random access memory device. It is well-suited for a variety of applications, including embedded systems, multimedia, and storage. The device is organized as 32Kx8 banks of 4K bytes, meaning that it can store and access large amounts of data very quickly. Additionally, the device uses a low-power and low-voltage write cycle, reducing its power consumption and device stress during operation.
The specific data is subject to PDF, and the above content is for reference
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