CY7C1021CV33-10VXCT Allicdata Electronics
Allicdata Part #:

CY7C1021CV33-10VXCT-ND

Manufacturer Part#:

CY7C1021CV33-10VXCT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 1M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: CY7C1021CV33-10VXCT datasheetCY7C1021CV33-10VXCT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Base Part Number: CY7C1021
Description

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CY7C1021CV33-10VXCT is a highly versatile and powerful non-volatile static random access memory (SRAM) device suited for a variety of applications. The device has a 32Kbyte capacity consisting of 256Kbits×32, and is organized as 2048 by 4-bit SRAM cells. It is designed to meet the increasing demand for data storage, data backup, and code storage applications in commercial and industrial markets.

The CY7C1021CV33-10VXCT is optimized for low power consumption, making it an ideal choice for battery-backed applications. The device includes industry-standard operating and control options, enabling advanced low-power consumption performance. It supports industry standard read/write and cycle time specifications, as well as an active supply current as low as 10 μA in static mode. The device also includes a built-in write protect feature, enabling users to configure the device for write-protecting code memory or data memory.

The CY7C1021CV33-10VXCT`s low power consumption, combined with its enhanced performance, makes it an ideal choice for a variety of uses. These include applications such as data logging, digital measurement, memory/data backup, data encryption, RFID/contactless payment systems, and portable system power control. Additionally, its advanced features make it suitable for aerospace, automotive, and other high-end applications.

The working principle of the CY7C1021CV33-10VXCT is based on the technology of non-volatile SRAM cells. Each SRAM cell is composed of two voltage-sensing transistors, two inverters, and an integrated latch function. The device has separate read, write, and control buses for incoming and outgoing data/address signals. Data transfer requires only a single instruction, making the device highly efficient. Data stored is retained until the power is removed from the device, eliminating the need for write operations.

The device is also equipped with an internal Write-Protect circuit that prevents data corruption due to accidental write operations. The Write-Protect circuit blocks any attempt to write to the memories, but still allows read operations. This feature helps protect the device from accidental write operations. The CY7C1021CV33-10VXCT also features a built-in Enhanced Mirror Image feature, which provides a check for valid code images prior to programming the device.

The CY7C1021CV33-10VXCT is a low power, versatile device that is suitable for various applications. It is easy to use, and its low power consumption is ideal for battery-backed applications. Its Write-Protect feature ensures that important data is not modified or corrupted, and its Enhanced Mirror Image feature ensures data integrity. Its wide range of features makes it an ideal choice for applications that require reliable, low-power data storage and code storage.

The specific data is subject to PDF, and the above content is for reference

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