CY7C1041D-10VXI Allicdata Electronics
Allicdata Part #:

428-1975-5-ND

Manufacturer Part#:

CY7C1041D-10VXI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 4M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: CY7C1041D-10VXI datasheetCY7C1041D-10VXI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Base Part Number: CY7C1041
Description

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Memory is an essential component of a computing system, and the CY7C1041D-10VXI is a versatile, cost-effective memory solution for those looking to improve their current memory-related needs. This memory device is a member of Cypress Semiconductor\'s PSoCTM family, and it is ideal for applications where space is a primary concern.

The CY7C1041D-10VXI is a 32-Kbit (4K x 8) non-volatile memory device with a standard 1M x 8 organization. This device offers fast read and write speeds, as well as wide operating temperature ranges and a low power consumption when in use. The memory device also features a proprietary Cypress interface, making it easy to incorporate into a host system.

When it comes to the application of this memory device, the CY7C1041D-10VXI is ideal for embedded applications, such as medical and industrial embedded systems. It can also be used in automotive and consumer applications, as well as server and storage systems. This device is particularly useful in applications where a device needs to save data and execute instructions even when the power has been turned off.

Unlike other non-volatile memories like flash, EEPROMs and battery-backed SRAMs, the CY7C1041D-10VXI has superior benefits when it comes to endurance, reliability, and temperature. With this device, the user has the ability to operate at temperatures ranging from -40 to +85°C, significantly increasing the reliability of the memory device in a wide range of applications. Furthermore, the CY7C1041D-10VXI is tested for endurance of over 100 million cycles, making it extremely reliable over extended periods of time.

When it comes to the working principle of the CY7C1041D-10VXI, the device works similarly to other non-volatile memory devices, in that it executes commands and stores data even when the power is turned off. The device functions by reading and writing data to a number of SRAM or EEPROM cells along with two power sources: one to write, and the other to read the data. The device is organized into rows and columns, and writing is accomplished by setting the write voltage to either a higher or lower level than the read voltage. Furthermore, the CY7C1041D-10VXI also features write protect capabilities, allowing users to lock data and protect it from accidental overwrites or deletions.

Overall, the CY7C1041D-10VXI is a reliable, cost-effective memory solution for those looking to improve their current memory-related needs. This device can be used in a wide range of applications, from automotive and consumer applications to medical and industrial embedded systems, thanks to its excellent endurance, reliability, and temperature range. The device also features a powerful Cypress interface and write protect capabilities, making it ideal for applications where space and data integrity are of primary concern. With its excellent endurance and temperature range, the CY7C1041D-10VXI is an excellent option for those in need of reliable and cost-effective memory solutions.

The specific data is subject to PDF, and the above content is for reference

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