Allicdata Part #: | CY7C1041GE30-10VXI-ND |
Manufacturer Part#: |
CY7C1041GE30-10VXI |
Price: | $ 4.84 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 4M PARALLEL 44SOJ |
More Detail: | SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para... |
DataSheet: | CY7C1041GE30-10VXI Datasheet/PDF |
Quantity: | 140 |
1 +: | $ 4.39740 |
10 +: | $ 4.01436 |
25 +: | $ 3.93826 |
50 +: | $ 3.91117 |
170 +: | $ 3.50858 |
340 +: | $ 3.49511 |
510 +: | $ 3.27694 |
1020 +: | $ 3.13750 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 4Mb (256K x 16) |
Write Cycle Time - Word, Page: | 10ns |
Access Time: | 10ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.2 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-BSOJ (0.400", 10.16mm Width) |
Supplier Device Package: | 44-SOJ |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CY7C1041GE30-10VXI is a memory device that is part of the Cypress Semiconductor family of products. It is a 16-bit low-power static random access memory (SRAM) that offers high performance at a very low power consumption. The device features a power-down mode, which is ideal for battery-powered applications, and it comes in a 32-pin SOIC-N package that is designed for ease of assembly and shipping.
The CY7C1041GE30-10VXI is designed for applications that require fast data access and power conservation. Its 6 ns access time (with a 2.5V supply voltage) allows for quick memory operations, while its low power requirements minimize system design costs and make it an ideal choice for battery-powered applications. The device is capable of operating over a wide temperature range, from -40 to +85 degrees Celsius, and is designed to run on a single 5.5V power supply.
The CY7C1041GE30-10VXI features a 16-bit data bus width, making it a good fit for applications that require large amounts of data transfer. It is capable of supporting up to 16 kB of memory, and it can run operating cycles at 300 MHz. In addition, the device includes two byte and one word write modes, as well as three byte and two word read modes, giving users the flexibility to configure the device according to their particular needs.
The working principle of the CY7C1041GE30-10VXI memory device is based on a static random access memory (SRAM) architecture. This type of memory utilizes transistors and capacitors to store data. The transistors act as switches, and when a binary logic value is applied to them, they allow the capacitors to store bits of binary data. The transistors, when triggered, will either connect or disconnect the capacitors, enabling the storage of data.
The CY7C1041GE30-10VXI can be used in a variety of applications, from automotive and communication systems to medical and industrial applications. Its low power requirements and fast access time make it well suited for applications requiring frequent data transfer, while its high performance and reliability make it an ideal choice for more demanding applications. The device also features an Autonomous Power Down Mode, which allows it to reduce its power consumption when not in use, making it an ideal choice for battery-powered applications.
In conclusion, the CY7C1041GE30-10VXI is a high-performance, low-power static random access memory (SRAM) device that is well suited for a variety of applications. Its fast access time, wide temperature range, and low power requirements make it a great choice for applications requiring frequent data transfer, and its Autonomous Power Down Mode ensures that it reduces its power consumption when not in use, making it an ideal choice for battery-powered applications.
The specific data is subject to PDF, and the above content is for reference
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