Allicdata Part #: | 428-3958-2-ND |
Manufacturer Part#: |
CY7C109D-10VXIT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 1M PARALLEL 32SOJ |
More Detail: | SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral... |
DataSheet: | CY7C109D-10VXIT Datasheet/PDF |
Quantity: | 3750 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 10ns |
Access Time: | 10ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-BSOJ (0.400", 10.16mm Width) |
Supplier Device Package: | 32-SOJ |
Base Part Number: | CY7C109 |
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Memory
CY7C109D-10VXIT is a type of memory commonly used in electronic circuits. It is designed for high-speed applications and is used for dynamic random access memory (DRAM) and static random access memory (SRAM). The device is composed of two interconnected integrated circuits (ICs) that can store up to 1024 bits of data. The memory cells are arranged in an array to enable multiple memory locations to be accessed simultaneously.
Application Field
CY7C109D-10VXIT memory is widely used in the navigation and communication systems, pharmaceutical and medical equipment, industrial computers, portable devices and in other areas. It is particularly handy in low-power, low-cost and other applications where a large amount of information needs to be stored within a small size.
Working Principle
The CY7C109D-10VXIT is composed of two ICs, one IC for dynamic random access memory and the other for static random access memory. As soon as power is switched on the two ICs will start communicating, and the device will be ready to take in data. Data stored in the dynamic memory is updated by refreshing the cells every few milliseconds, while static memory can remain in storage without requiring any refreshes. Data is read from the memory array by using address lines that are connected to memory address registers (MARs). Once a data address has been supplied by the MARs, the read/write operation can take place.
The CY7C109D-10VXIT memory supports different types of operations, including read, write, refresh and refresh all. During refresh operations, the memory controller uses a refresh address generator to refresh each row that needs to be refreshed. Data can also be written to the memory cells through the data buffers, while read operations are done through the data out lines.
The CY7C109D-10VXIT memory is a very useful device for a wide range of applications. Its small size and low power consumption make it a good choice for many applications that require prolonged memory storage. The device is also reliable and easy to use.
The specific data is subject to PDF, and the above content is for reference
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