CY7C1150KV18-400BZXI

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CY7C1150KV18-400BZXI is a static random-access memory (SRAM) integrated circuit (IC). It is an 8-bit non-volatile memory device that uses a direct read out of memory cells for storage and a synchronous interface for faster operation. This device is designed for applications like data storage and buffering, high-speed computing, and field-programmable gate arrays (FPGAs).

The CY7C1150KV18-400BZXI is specifically designed to use an industry standard synchronous two-wire serial interface for read and write operations. It is based on an 8-bit data register which holds the memory data that is being manipulated. This data is clocked in and out using the rising edge of the clock signal (CLK) and the enabled (EN) signal. The write and read operations are initiated by changing the value of the write/read (WR) signal.

The storage capacity of the CY7C1150KV18-400BZXI is 16KB. It has a single-clock write and read access time of 14ns and 11ns, respectfully. In terms of power consumption, it supports 1.8V-2.5V, with a current consumption of around 25mA at 3.3V VIH/VIL. This device is also compliant with the Iec 61000-4-2 ESD standards and comes in a compact 9x9 VFBGA package.

The CY7C1150KV18-400BZXI is a versatile and reliable memory device that is useful in a number of different applications and industries. Its main application fields include data buffering and storage and enabling high

The specific data is subject to PDF, and the above content is for reference