CY7C1168KV18-400BZXC Allicdata Electronics
Allicdata Part #:

CY7C1168KV18-400BZXC-ND

Manufacturer Part#:

CY7C1168KV18-400BZXC

Price: $ 29.04
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 18M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, DDR II+ Memory IC 18Mb (1M x 1...
DataSheet: CY7C1168KV18-400BZXC datasheetCY7C1168KV18-400BZXC Datasheet/PDF
Quantity: 131
1 +: $ 26.40330
10 +: $ 24.48750
25 +: $ 23.62170
50 +: $ 23.03430
100 +: $ 20.17430
250 +: $ 19.61780
Stock 131Can Ship Immediately
$ 29.04
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 18Mb (1M x 18)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1168
Description

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The CY7C1168KV18-400BZXC is a high-density 8K x 8 SRAM from Cypress Semiconductor Corporation. It is specifically designed for FPGA and ASIC applications that require very high-speed memory access. The device is available in two different packages: a 68-pin TQFP and a 68-pin VFQFPN. It is a part of Cypress’s PowerXtend family of SRAM devices, which provides advanced features such as CRC checksum support, advanced burst architecture, and self-refresh capability.

The CY7C1168KV18-400BZXC provides up to 8K x 8 bits of SRAM and is organized as a single 8K x 8 bit array. It features fast access and cycle times of 75ns with a power supply voltage of 3.3V. The device has been designed to use a low-power, low-voltage operational mode that consumes around 15mW in a typical application.

The CY7C1168KV18-400BZXC is designed for use in FPGA and ASIC designs that require very high-speed memory access. It can be used for a variety of applications, including video and image processing, communications, gaming, embedded systems, and military and aerospace applications, among others.

The CY7C1168KV18-400BZXC is a single-chip device that contains embedded circuitry to allow high-speed memory access. It features an 8-bit SRAM array that can be accessed in both burst and single-cycle operation modes. The device also supports sleep and self-refresh modes to reduce current consumption during idle periods.

The device’s advanced burst architecture provides high-speed, low-latency access to the SRAM array. It supports the following burst types: linear burst, wrap burst, and incrementing burst. The linear burst mode allows data to be read from consecutive addresses in the array in one cycle, while the wrap burst mode allows data to be read from the same address multiple times in one cycle. The incrementing burst mode enables data to be read from a base address incrementally in one cycle.

The CY7C1168KV18-400BZXC also supports a programmable CRC checksum feature, which allows data integrity to be verified quickly. The device also provides a number of additional features, such as write-protect, control of access timing, and internal data masking.

In summary, the CY7C1168KV18-400BZXC is a high-density 8K x 8 SRAM from Cypress Semiconductor Corporation. It is specifically designed for FPGA and ASIC applications that require very high-speed memory access. The device supports advanced burst architecture and provides a variety of features, such as CRC checksum support, sleep and self-refresh modes, write-protect, control of access timing, and internal data masking. It is an ideal solution for a variety of applications, including video and image processing, communications, gaming, embedded systems, and military and aerospace applications.

The specific data is subject to PDF, and the above content is for reference

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