Allicdata Part #: | CY7C1168V18-400BZXC-ND |
Manufacturer Part#: |
CY7C1168V18-400BZXC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 18M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, DDR II Memory IC 18Mb (1M x 18... |
DataSheet: | CY7C1168V18-400BZXC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, DDR II |
Memory Size: | 18Mb (1M x 18) |
Clock Frequency: | 400MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Base Part Number: | CY7C1168 |
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CY7C1168V18-400BZXC is a high-performance static random access memory (SRAM) component component manufactured by Cypress Semiconductor. SRAM is characterized as an asynchronous memory technology, meaning that it does not rely on any clock signal to keep track of the data stored inside. This makes it ideal for applications in which speed and access time are of utmost importance.
CY7C1168V18-400BZXC is a low-power SRAM with versatile capabilities, optimized for use in a wide range of consumer, industrial, and automotive applications, such as embedded systems, automotive infotainment, consumer battery-powered products, and network devices. The device offers power conversion efficiency and low-noise performance with an operating voltage of 3.3V or 2.5V. It consists of 4,096 words (8bit) of storage each. The access time is 25ns and a cycle time of 120ns. The device features synchronous and asynchronous interfaces, as well as byte and word write enable options. Additionally, the device includes transistor-transistor logic (TTL) compatible input and output data bus that is 5V tolerant and nearly static during standby.
In the CY7C1168V18-400BZXC, data is read from and written to the SRAM cells non-destructively. This means that the data is not erased when it is written back or when another memory location is read. The contents of the memory cells remain static until the data is either overwritten or a reset command is issued. This allows for higher performance, less power consumption, and an improved end-user experience.
The CY7C1168V18-400BZXC is designed to operate in both synchronous and asynchronous modes. This allows the device to be used in different applications with varying timing requirements. In synchronous mode, the device is connected to a system\'s clock signal and will follow the clock\'s cycles and take the appropriate action depending on the command given. In asynchronous mode, the device will still process the commands, but will not rely on a regularly-occurring clock signal.
The CY7C1168V18-400BZXC is widely used in various sectors, including consumer products, computing, mobile telecommunications, automotive, and medical. It is perfect for applications requiring low-noise performance, high-speed random reads and writes, high read/write cycles, and low power consumption. Due to its versatility and performance, the device is widely adopted for a variety of applications, including those in which rapid read/write cycles are required.
To sum it up, the CY7C1168V18-400BZXC is a high-performance, low-power static random access memory device suitable for a variety of consumer, industrial, and automotive applications. It is designed to operate both synchronously and asynchronously, offering nearly static performance even during standby modes. The device significantly improves the speed of data access and offers low power consumption. Additionally, its 5V tolerant input and output bus allows for wide compatibility with various system architectures.
The specific data is subject to PDF, and the above content is for reference
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