CY7C1170V18-400BZXC

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CY7C1170V18-400BZXC Memory

The CY7C1170V18-400BZXC is a high-speed and high-density low-power static random access memory (SRAM). This memory device consists of 18,000 memory cells with a data width of 4 bits. It operates with a supply voltage of 3.3 V and can contain up to 72,000 5-bit words. This device has a low power consumption, fast access and cycle times, and is suitable for the design of high-speed and ultra-low power application.

Application Field of CY7C1170V18-400BZXC

The CY7C1170V18-400BZXC is widely applied in middle/low-end embedded system applications, such as medical imaging, automotive, consumer electronics, surveillance and industrial automation. It can be used for instant hardware register storage, ROM, buffer and cache memory applications, etc.

The CY7C1170V18-400BZXC is specially designed for low-power applications such as display, network communication, and industrial automation. It can implement conditions, I/O control and data storage even with reduced power consumption. This memory device is also suitable for caching operations, which improves the operating speed and performance of the system. As a result, the CY7C1170V18-400BZXC is becoming a new choice in various low-end embedded applications.

Working Principle of CY7C1170V18-400BZXC

The CY7C1170V18-400BZXC contains eighteen thousand 256-bit Static RAM cells in a single IC package. It has four ports for input and four ports for output. Each port can hold either 5-bit or 4-bit data. The voltage level of the ports could be set to TTL or CMOS for data access purposes. The CY7C1170V18-400BZXC uses a multiplexed address and data bus to facilitate high-speed access. The CY7C1170V18-400BZXC also uses a two-phase clock to meet both speed and power requirements.

The CY7C1170V18-400BZXC has a built-in sense amplifier and row-decoder to allow fast access and dynamic refresh. The device utilizes a specialized write and read control circuitry. The CY7C1170V18-400BZXC senses the input data and determines if the data valid for writing or reading. It then activates the write or read pins accordingly. The CY7C1170V18-400BZXC can be used as either a random access memory or a programmable logic array to support various applications.

The CY7C1170V18-400BZXC also contains built-in buffer and pull-up circuits which are used to extend the valid voltage range of the data pins. The CY7C1170V18-400BZXC is capable of storing data in both volatile and non-volatile modes, depending on the application. The device also supports a two-port operation which enables the device to be used in multiple bus structures.

The CY7C1170V18-400BZXC is a high-performance and low-power memory device that provides excellent data protection with its built-in protection features. It is also established to meet the requirements of the demanding integrated system applications. The CY7C1170V18-400BZXC is a cost-effective and reliable memory device for numerous applications.

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