Allicdata Part #: | CY7C1312CV18-167BZC-ND |
Manufacturer Part#: |
CY7C1312CV18-167BZC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 18M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, QDR II Memory IC 18Mb (1M x 18... |
DataSheet: | CY7C1312CV18-167BZC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, QDR II |
Memory Size: | 18Mb (1M x 18) |
Clock Frequency: | 167MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Base Part Number: | CY7C1312 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CY7C1312CV18-167BZC is a very popular and versatile memory device used in a variety of applications. It is a low-power, high-performance 32K x 8-bit static RAM (SRAM) with a fast access time of 10ns. It is widely used in applications requiring a low-power, high-performance, reliable and cost-effective memory solution such as embedded systems, consumer electronics, medical equipment and industrial automation.
The CY7C1312CV18-167BZC memory device is available in a 48-pin DIP package and is able to operate from a single 3.3 V or 5 V power supply. It is also able to support a wide range of operating temperatures from -40°C to +85°C. In terms of its memory organization, the device contains 32,768 words (or 32K) x 8 bits each, enabling a total of 256K bits of storage capacity. It also features a typical access time of 10ns, a low-power standby current of 4 μA and a maximum read access time of 45 ns.
In terms of its applications, the CY7C1312CV18-167BZC is ideal for use in systems requiring low-power, high-performance memory solutions. It can be used as a main memory or supplemental memory in embedded systems, consumer electronics products, medical equipment, industrial automation and other electronic devices. It can be also used to temporarily store data and programs that need to be accessed quickly, eliminating long wait times and improving overall system performance.
The working principle of the CY7C1312CV18-167BZC memory device is based on the use of a two-transistor cell. This cell consists of two interconnected field effect transistors (FETs) that form a storage node where data is stored. In order to read from or write to the SRAM, a pair of latches is used. When one latch is opened, the other is closed, and the data stored in the memory cell is retrieved or written. The latch then closes, locking in the data until the next write or read operation.
The CY7C1312CV18-167BZC memory device is a reliable and cost-effective option for systems that need high-performance memory solutions. Its wide range of operating temperatures and low current requirements make it an ideal solution for a variety of applications. By quickly and securely storing large amounts of data, the CY7C1312CV18-167BZC supports improved system performance, thus providing great value to companies and consumers alike.
The specific data is subject to PDF, and the above content is for reference
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