CY7C131E-25NXC

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CY7C131E-25NXC is a high-performance, low-voltage Static RAM, widely used in a variety of memory applications. This device has an advanced memory architecture and several powerful features that make it the first choice in many industrial, consumer, automotive, and military applications.

The CY7C131E-25NXC is a 26-pin device and is available in either a commercial (0°C to +70°C) or an industrial (-40°C to +85°C) temperature range. Its 25ns access is one of the fastest in its class. The CY7C131E-25NXC is organized as 32 Kwords × 16 bits and has an asynchronous address latch. A single power supply of +3V to +3.6V is required and both TTL and 5V CMOS compatible inputs and outputs are included.

The basic goal of Static Random Access Memories (SRAMs) is to store information in memory cells and be able to access memory address locations to read or write data. The cells are composed of a pair of cross-coupled bistable devices and can be constructed in either a 6-transistor SRAM cell or a 4-transistor SRAM cell. The CY7C131E-25NXC is constructed using the 4-transistor SRAM cell.

The 4-transistor SRAM cell is composed of two cross-connected inverters, which are latched by two Decoders. Each mux-out line is connected to an inverter and is used to access the content of the SRAM cell. When the SRAM cell is in the write-mode, the mux-out lines are connected to the Decoder\'s VCC line, and when in read-mode, the mux-out lines are connected to the overdrive lines that hold the opposite of the data written in the cell.

The CY7C131E-25NXC utilizes a sequence of access logic to transfer data from the memory to the memory output pins. To access the data stored in the SRAM cell, the row address is first applied to the row decoders and the column address to the column decoders. This causes the SRAM cell to activate the mux-out lines, which in turn selects one of the four transistors, which will access the stored data from the SRAM cell.

The CY7C131E-25NXC also has a sense amplifier connected to the SRAM cell. This allows for accurate amplification of the small signal from the SRAM cell, which is then buffered and provided to the output pins. The SRAM\'s innovation is its ability to sense the voltage level of the SRAM cells, and then amplify it so that it is able to be more easily read at the output pins.

The CY7C131E-25NXC application field includes but not limited to equipment such as medical devices, industrial controllers, test and measurement equipment, mainframe computers, telecommunications, and embedded systems. In many cases, the device\'s low voltage and wide temperature range characteristics make it prefect for these applications.

In summary, the CY7C131E-25NXC is static RAM which has been designed for use in modern memory applications with its range of features, 25ns access time, wide temperature range, and 4-transistor SRAM cell capable of accurate amplification and buffering of the stored data. This makes it suitable for a wide range of applications that require fast data retrieval from memory.

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