Allicdata Part #: | CY7C1387D-167BZI-ND |
Manufacturer Part#: |
CY7C1387D-167BZI |
Price: | $ 16.33 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 18M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous Memory IC 18Mb (1M x 18) Parall... |
DataSheet: | CY7C1387D-167BZI Datasheet/PDF |
Quantity: | 136 |
1 +: | $ 14.84280 |
10 +: | $ 13.82350 |
25 +: | $ 13.67180 |
50 +: | $ 13.33430 |
136 +: | $ 11.70650 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | CY7C1387 |
Supplier Device Package: | 165-FBGA (13x15) |
Package / Case: | 165-LBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 3.135 V ~ 3.6 V |
Memory Interface: | Parallel |
Access Time: | 3.4ns |
Series: | -- |
Clock Frequency: | 167MHz |
Memory Size: | 18Mb (1M x 18) |
Technology: | SRAM - Synchronous |
Memory Format: | SRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CY7C1387D-167BZI is a static random access memory device (SRAM) developed by Cypress Semiconductor. It is a high-performance SRAM device featuring a very low power consumption and a low power standby mode. This device is ideal for use in applications such as embedded systems, automotive, industrial control, and audio/video processing.
The CY7C1387D-167BZI is a 16,384 bit SRAM device, comprised of a 4K x 16 addressable memory array. It has a 1.8V single-power supply and operates over a temperature range of 0-70 degrees Celsius. The device also has full static power dissipation at zero operating clock frequency, making it suitable for field use and low operating frequency conditions.
The CY7C1387D-167BZI is based on a 3-transistor memory cell, consisting of a field effect transistor (FET) connected as a transistor and two gate-controlled memory circuits, commonly known as access transistors. The access transistor acts as an “address switch” to select the desired row of memory cells. When the right row is selected it is then activated by the FET which allows the memory dynamic element to store data. The memory cells inside of the chip are organized into a 2D matrix structure with rows and columns.
The CY7C1387D-167BZI has a power-saving “on-the-fly” write-mode. This mode allows data to be written in halves and sides, allowing the device to enter power savings during idle write cycles. Additionally, the device features a low-power standby mode, allowing the device to enter a power down state which significantly reduces active power draw when data does not need to be written or read. This low-power feature provides enhanced reliability and stability.
The CY7C1387D-167BZI is designed for applications requiring high loading density along with low power dissipation. It is also suitable for applications that require a maximum data retention period and/or ultra-low power dissipation, such as automotive and industrial control. It is well-suited for applications where power savings is a valuable factor, such as embedded systems, audio/video processing, and other portable applications.
The CY7C1387D-167BZI is an ideal solution for high performance and low power requirements. It features a wide operating voltage range that provides reliable power stability, a low operating current, and a standby mode that reduces power dissipation. With its high performance, low-power features, and its wide operating temperature range, the CY7C1387D-167BZI is the ideal memory solution for today’s demanding applications.
The specific data is subject to PDF, and the above content is for reference
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