CY7C1440KV33-250AXC

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The CY7C1440KV33-250AXC is a dynamic random access memory (DRAM) that provides 576 kbits of nonvolatile memory. The device features industry leading low current consumption, advanced temperature margining and enhanced configurability with an improved architecture for efficient operation and dynamic programming. This makes the memory ideal for use in automotive, medical, industrial and consumer applications.

The CY7C1440KV33-250AXC is a high-density, industry-standard DRAM, equipped with a single 8 Kbyte page mode and a 128 Kbit SRAM. It operates at a maximum clock frequency of 250 MHz, which makes it suitable for use in high-performance applications. The device is optimized for low power consumption and is capable of clock speeds of up to 250 MHz.

The core of the CY7C1440KV33-250AXC consists of 8 Kbyte page mode memory and 128 Kbits of SRAM. In addition, the device features a 576 Kbits of nonvolatile memory for data storage. The device features an improved architecture that enables efficient operation and dynamic programming.

The CY7C1440KV33-250AXC features advanced temperature margining, which is a feature that enables the device to be tuned to the temperature of its environment. This is important for applications that require reliable operation at extreme temperatures. Temperature margining allows the device to be tuned to the specific temperatures of its application and the DRAM to remain stable even during temperature changes.

The CY7C1440KV33-250AXC also features enhanced configurability, allowing users to customize the memory as needed. The device supports an advanced dual-mode interface, enabling users to configure the device for either a serial or a parallel interface. This allows the device to be use in applications that demand high performance and flexibility.

The CY7C1440KV33-250AXC is a suitable choice for a variety of memory intensive applications, such as automotive, medical, industrial, and consumer applications. It offers an advanced random access memory architecture with a fast page mode and an improved SRAM. Its enhanced temperature margining and configurability ensure reliable operation and efficient data storage. Furthermore, its low current consumption makes it an ideal choice for applications that only require a low amount of power.

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