CY7C1565V18-400BZC

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Memory is an essential component for the operation of computers and other electronic devices. The CY7C1565V18-400BZC is a type of static random access memory (SRAM) from Sumitomo Electric Industries. It is a high speed memory device designed for use in applications such as real-time recording, telecommunications, data acquisition, and embedded systems. This article will discuss the application field and working principle of the CY7C1565V18-400BZC.

The CY7C1565V18-400BZC is a low power SRAM designed to be used in a wide range of low power applications. It features a low operating voltage range of 1.65V to 3.3V, and a high clock speed of 400MHz. The device also features a low standby power consumption of 0.099µA and a maximum active power consumption of 4mA. These features make it an ideal choice for applications that need to operate under low power conditions.

The device comes in a very small package size of only 7.5mm x 8.7mm, making it suitable for space-limited applications. In addition, this device features high speed write and read operations, with a write speed of 14MHz and a read speed of 17MHz. This makes it suitable for applications that require fast access to data.

In terms of its application fields, the CY7C1565V18-400BZC is suitable for a wide range of applications that require fast, reliable and low power memory. Examples include embedded systems, real-time recording, telecommunications, data acquisition, industrial control, medical and automotive systems. Additionally, it can be used in ROM, ROM-shadow, shadow/EPROM and non-volatile/flash memory applications.

Now let’s take a look at how this device works. The CY7C1565V18-400BZC is a static random access memory which uses a two transistor cell structure to store a single bit of data. Each cell is composed of two transistors and two capacitors, and is connected to two address lines, a control line, and a data output line. When the control line is high, the two transistors are turned on and the cell is enabled. This allows the cell to store either “1” or “0”, depending on the voltage on the address line. To read the data from the cell, the address line is set to a specific voltage and the data line is read. To write to the cell, the address line is set to the desired Logic level and the control line is set high.

In summary, the CY7C1565V18-400BZC is a type of high speed, low power SRAM designed for use in a wide range of applications such as embedded systems, real-time recording, telecommunications, data acquisition, industrial control, medical and automotive systems. It features a low operating voltage range of 1.65V to 3.3V, a high clock speed of 400MHz, and a low standby power consumption of 0.099µA. Additionally, it features two transistor cell structure which enables fast read and write operations. This makes the CY7C1565V18-400BZC an ideal choice for low power memory applications.

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