![CY7C1565V18-400BZXC Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | CY7C1565V18-400BZXC-ND |
Manufacturer Part#: |
CY7C1565V18-400BZXC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 72M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, QDR II Memory IC 72Mb (2M x 36... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, QDR II |
Memory Size: | 72Mb (2M x 36) |
Clock Frequency: | 400MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (15x17) |
Base Part Number: | CY7C1565 |
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CY7C1565V18-400BZXC is one of the most popular memory devices available today. It is used in a wide variety of applications ranging from automotive, industrial, and consumer applications. It offers fast read and write speeds, and has low power consumption making it attractive for many applications.The CY7C1565V18-400BZXC is a synchronous 8-bit wide, 16Mbit SRAM device. It is organized as 32,768 words by 16 bits. Each word is composed of 8-bits of application data and 8-bits of parity data. The device is designed to provide fast access time while maintaining low power consumption.
The CY7C1565V18-400BZXC device is available in two common memory packages, the SOIC-16 and the PDIP-8. The device is designed to be operated at 3.3V or 5V and 5V write operations. It features a low write power drain of less than 1µA. It also features advanced write protection circuitry that allows changes in data and address cycles without increasing the number of write cycles. This advanced feature helps to reduce the overall power consumption of the device.
The CY7C1565V18-400BZXC operates by providing a number of access and write cycles. In order to read or write a word, the device first needs to receive the appropriate address. This address is then decoded to select the desired word. The decoded address is then sent to the Read/Write (R/W) line. This signal, along with the associated data signal, is then used to initiate a read or write cycle. The instructions to read or write the selected word are then sent to the memory device.
During read/write operations, the CY7C1565V18-400BZXC device works in tandem with an appropriate external SRAM controller. The controller provides support for both single and multiple data block access. The number of bytes that can be read/written in one access cycle is determined by the maximum address range of the controller. The controller also provides the read/write commands and address inputs required by the device. It is the job of the controller to carry out the actual read/write operations.
The application fields of CY7C1565V18-400BZXC are generally related to high-speed, low-power mobile, automotive and industrial applications. It is commonly used in applications such as automotive power train control, navigation systems and line-of-sight imaging systems. It is also used in various industrial applications such as machine vision systems, robotics, test equipment and robot guidance. The device is capable of providing performance, functionality and reliability in extreme environments.
In summary, the CY7C1565V18-400BZXC device is one of the most popular memory devices used in many applications. It is a synchronous SRAM device with a 8-bit wide data interface and 16Mbits capacity. It is powered by 3.3V or 5V, and features low write power drain as well as advanced write protection circuitry. It is designed to be used in high-speed, low-power mobile, automotive and industrial applications. It is an excellent choice for applications that require fast access and low power consumption.
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