CY7C1568V18-400BZXC Allicdata Electronics
Allicdata Part #:

CY7C1568V18-400BZXC-ND

Manufacturer Part#:

CY7C1568V18-400BZXC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 72M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, DDR II Memory IC 72Mb (2M x 36...
DataSheet: CY7C1568V18-400BZXC datasheetCY7C1568V18-400BZXC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 72Mb (2M x 36)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)
Base Part Number: CY7C1568
Description

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Memory devices form the basis of any computing system and are essential for storing data and programs. CY7C1568V18-400BZXC is a high-density memory device that is used in a variety of applications. The device uses a four-bit data bus and is capable of storing up to 4K words of data. It is highly reliable and uses advanced error correction techniques to ensure data integrity.

The CY7C1568V18-400BZXC is a dual-data rate (DDR) device, meaning it can read and write data at twice the speed of a single-data-rate device. It is available in static random access memory (SRAM) and dynamic random access memory (DRAM) versions. The device also supports refresh operations for DRAM devices, which helps maintain data integrity over time. The device is designed to be very low power and it is also RoHS compliant.

The device is used in a wide range of applications, from medical equipment and embedded devices to industrial automation and indoor navigation systems. It is also used in military and aerospace applications. The device can be used to store large amounts of data in a small form factor and its advanced error correction allows for reliable data storage and retrieval. In embedded systems, the device can be used to store code and data, as well as providing access to peripheral devices. It can also be used to store data or firmware in automotive applications.

The CY7C1568V18-400BZXC is based on the principle of dynamic random access memory (DRAM). The device consists of an array of memory cells arranged in rows and columns. The cells are connected to one another through a set of address and data lines. When the device is powered up, it stores data in an array of cells. When a row of memory cells is accessed, current flows through the row and one or more cells are written to.

When data is read from the device, a refresh operation is executed. This operation refreshes the cells in order to maintain data integrity. This refreshes the cell data so that data can be stored in the cell over a long period of time. When writing to the device, data is written to the memory address specified by the address pins and the data pins.

The CY7C1568V18-400BZXC is a highly reliable memory device that is used in a variety of applications. It is low power, RoHS compliant and can store up to 4K words of data. It uses advanced error correction techniques to ensure data integrity and is based on the principle of dynamic random access memory (DRAM). The device is used in a variety of applications, from medical equipment and embedded devices to industrial automation and indoor navigation systems.

The specific data is subject to PDF, and the above content is for reference

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