CY7C1625KV18-250BZXC Datasheet/PDFThe CY7C1625KV18-250BZXC falls within the general category of a memory chip referred to as a Static Random Access Memory (SRAM). SRAM chips provide short-term storage for data, and the memory is retained even when the power is off. This makes SRAMs a preferred solution for applications where data (or code) must be retained for short periods of time and where frequently powering down is expected.
Primarily, the CY7C1625KV18-250BZXC is a non-volatile memory that can be used in a variety of applications, from embedded microcontrollers to datacom, telecom and networking systems. The chip is manufactured in a 14-pin small outline integrated circuit (SOIC) package and typically operates at a voltage of 1.7V to 3.6V.
Application Field
The CY7C1625KV18-250BZXC is primarily used to provide short-term storage for code or data that needs to be retained even when the power is off. The chip\'s small size and low power consumption make it suitable for applications in embedded microcontrollers, as well as datacom, telecom, networking and automotive systems.
This chip is also well-suited for applications in which data or code must be reliable and non-volatile. The device can store up to 2 Mbits of data and it is designed to operate in high-temperature, automated and reliable environments. The SRAM can also operate in a temperature range of -40°C to +85°C, providing flexibility when designing for long-term operation in harsh environmental conditions.
The CY7C1625KV18-250BZXC can also be used in applications such as a real-time counter or clock control unit, as well as for power management, providing power sequencing and real-time clock control capabilities.
Working Principle
SRAMs generally work on a principle referred to as a flip-flop, or parallel-access memory. This means that each bit of data is stored in two separate sections, or transistors, which allows for faster read operations compared to other memories due to the data not having to be read out of a single section. This provides a faster access time for the memory, allowing it to run faster and more efficiently.
The CY7C1625KV18-250BZXC is designed specifically to operate in high-temperature, automated and reliable environments. The device is built with a memory array that contains 2Mbits of SRAM (256Kx 8-bit) and it is designed to sustain a current drain of only 10mAh. The memory array is organized into banks, each containing 32Kx 32-bits, and each bank can be independently accessed. The chip also features a self-refresh mode that allows the device to continuously refresh its contents.
The chip can support low-power operation, reducing the power consumption and extending battery life. It also offers built-in protection from overvoltage, undervoltage and other electrical threats. As such, the CY7C1625KV18-250BZXC is well-suited to applications in which data or code must be reliable and non-volatile.