| Allicdata Part #: | 428-1954-5-ND |
| Manufacturer Part#: |
CY7C199D-10VXI |
| Price: | $ 1.39 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC SRAM 256K PARALLEL 28SOJ |
| More Detail: | SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para... |
| DataSheet: | CY7C199D-10VXI Datasheet/PDF |
| Quantity: | 99 |
| 1 +: | $ 1.39230 |
| 10 +: | $ 1.36230 |
| 100 +: | $ 1.31190 |
| 1000 +: | $ 1.23120 |
| 10000 +: | $ 0.98020 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Asynchronous |
| Memory Size: | 256Kb (32K x 8) |
| Write Cycle Time - Word, Page: | 10ns |
| Access Time: | 10ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 4.5 V ~ 5.5 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 28-BSOJ (0.300", 7.62mm Width) |
| Supplier Device Package: | 28-SOJ |
| Base Part Number: | CY7C199 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CY7C199D-10VXI, a type of static random access memory (SRAM), is used to store data that has to be accessed quickly. It operates differently from dynamic RAM (DRAM) and is typically used when a processor needs a small amount of very fast memory. This type of memory is an important component of many computer systems.
CY7C199D-10VXI uses a form of flip-flop circuit known as a latch to store each bit. The latch is set up with two transistors and two capacitors. When a voltage is applied to one of the transistors it starts to charge the capacitor. When the voltage is removed the capacitor remains charged, thus creating a stable state for the latch and representing a 1 bit of data.
To read a bit from the memory, an electric pulse is sent to the transistor associated with the capacitor. If the capacitor has been charged, the transistor will turn off and the electric pulse will not be received. However, if the capacitor has not been charged, which represents a 0 bit, the electric pulse will be received and the bit can be read.
To write a bit of data to the memory, a voltage is applied to the transistor associated with the capacitor to either charge or discharge the capacitor. If the capacitor is charged it represents a 1 and if it is discharged it represents a 0. This process is repeated for each bit stored in the memory.
CY7C199D-10VXI comes in various sizes, from 4K bits to 8K bits, allowing for a variety of applications. It is used in a range of devices including embedded systems, medical devices and telecommunications, as well as in computer systems for caching and buffering data. As SRAM does not need to be refreshed like DRAM, it does not require additional circuitry for refreshing and thus is faster and more reliable.
Due to its low power consumption and high speed, combined with its lack of extra circuitry, CY7C199D-10VXI is often chosen for applications that need memory that is fast, reliable and efficient. For this reason, it is a popular choice for use in systems with limited power and time resources.
The specific data is subject to PDF, and the above content is for reference
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CY7C199D-10VXI Datasheet/PDF