Allicdata Part #: | CY7C199D-25SXE-ND |
Manufacturer Part#: |
CY7C199D-25SXE |
Price: | $ 2.84 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 256K PARALLEL 28SOIC |
More Detail: | SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para... |
DataSheet: | CY7C199D-25SXE Datasheet/PDF |
Quantity: | 1000 |
135 +: | $ 2.57988 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 28-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 28-SOIC |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CY7C199D-25SXE belongs to a type of non-volatile memories called Static RAM (SRAM). SRAM is a type of RAM that stores information using a flip-flop circuit to maintain the state of each bit. It is characterized by high speed, low power consumption, and low cost in comparison to other types of memory, such as dynamic RAM (DRAM).
The CY7C199D-25SXE is a low-power CMOS SRAM that operates from a maximum voltage of 5.5 V and has a minimum operating temperature of -40°C and a maximum operating temperature of +125°C. It has an access time of 25 ns and a clock frequency of 66 MHz, making it suitable for high-performance applications. It also has a power-down mode that reduces power consumption when the module is not in use.
The CY7C199D-25SXE is available in 8-pin SOIC and 8-pin PDIP packages. It has an industry-standard interface and can be used with a wide range of external memory devices. It is commonly used in embedded applications such as microcontroller-based systems and DSPs, as well as in telecom and networking equipment.
The working principle of CY7C199D-25SXE is based on SRAM flip-flop circuit. Each bit of information is stored in a storage cell that is composed of two metal-oxide-semiconductors (MOS) capacitors and two cross-coupled inverters. The data stored in the cell can be accessed by applying the appropriate address to the SRAM interface. The CY7C199D-25SXE also contains memory management circuitry, which allows it to perform functions like burst mode to increase the memory access speed.
The CY7C199D-25SXE can be used in a wide range of applications. It is typically used as an alternative to DRAM in embedded applications where low power consumption and high speed are required. It is also widely used in automobiles, industrial automation, telecom, and networking equipment. Additionally, it is used in medical devices, PC peripherals, aviation, and other electronic devices.
In conclusion, the CY7C199D-25SXE is a low-power CMOS SRAM optimized for performance and low power consumption. It has an access time of 25 ns and is available in both SOIC and PDIP packages. It is suitable for a wide range of applications, including embedded systems, automobiles, industrial automation, telecom and networking equipment, medical devices, and PC peripherals. It is based on SRAM flip-flop technology, allowing it to store and retrieve data quickly and reliably.
The specific data is subject to PDF, and the above content is for reference
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