CY7C2165KV18-450BZC

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous, QDR II+
Memory Size:	18Mb (512K x 36)
Clock Frequency:	450MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.9 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	165-LBGA
Supplier Device Package:	165-FBGA (13x15)
Base Part Number:	CY7C2165

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Introduction

The CY7C2165KV18-450BZC is a high-performance, high-density, mixed signal non-volatile memory device commercially available from Cypress Semiconductor Corporation. It was designed to provide vast amounts of non-volatile memory storage capacity and low-power operation for applications in the automotive, security, industrial, medical and aerospace industries. This article will explore the application fields and working principles of the CY7C2165KV18-450BZC and explain why it is such a trusted and popular memory device.

Application Fields

The CY7C2165KV18-450BZC is a mixed-signal non-volatile memory device that features a 32-pin package, is powered by a single +3.3V supply, and offers a low-power, high-density storage capacity of up to 4GB (512MB) in a single die. Due to its unique design and capabilities, the CY7C2165KV18-450BZC can be used in a variety of different applications.In the automotive industry, the CY7C2165KV18-450BZC can be used as an integral component in advanced driver assistance systems, providing the necessary memory storage to accurately capture and store onboard data. It is also widely used in security applications, where it provides a secure and stable data storage solution, protecting sensitive data and preventing breaches.The medical, industrial and aerospace industries also use the CY7C2165KV18-450BZC extensively, thanks to its ability to cope with harsh environments and extreme temperature ranges. It is a reliable and durable memory storage solution for mission-critical applications, and is widely used for its high-speed, low-power consumption.

Working Principle

The CY7C2165KV18-450BZC utilizes a hybrid random-access programming. This provides a low-power, write-once, read-many performance for its embedded non-volatile memory. With this process, data is written to the memory blocks in a random sequence, which allows the device to use less energy to complete a write operation.The CY7C2165KV18-450BZC also utilizes built-in error detection and correction, which ensures data-consistency even under extreme temperature or operating conditions. This provides an additional layer of protection and ensures the accuracy of stored data.The device also includes an on-chip voltage regulator, which allows the device to be powered by a single +3.3V supply voltage. This reduces power consumption, allowing the device to operate reliably and efficiently under a wide range of operating conditions.

Conclusion

The CY7C2165KV18-450BZC is an advanced memory device designed to provide high-performance storage capabilities in automotive, security, industrial, medical and aerospace applications. It features a hybrid random-access programming, built-in error detection and correction, and an on-chip voltage regulator, all of which ensure data-consistency and reliability. With its low power consumption, high-density storage capacity, and excellent performance, the CY7C2165KV18-450BZC is an ideal memory solution for a variety of applications.

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