Allicdata Part #: | DMG563H10RTR-ND |
Manufacturer Part#: |
DMG563H10R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN/PNP SMINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | DMG563H10R Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms, 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms, 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V / 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD (5 Leads), Flat Lead |
Supplier Device Package: | SMini5-F3-B |
Base Part Number: | DMG563 |
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- DMG563H10R Application Field and Working Principle
The DMG563H10R is a type of Bipolar Junction Transistor (BJT) array, pre-biased and optimized for power switching applications. This MJT array combines NPN transistors and pre-set gate-level inputs to provide a reliable and easy to use solution for electronic energy control. The DMG563H10R operates with a wide supply voltage and a high output current capability.
In terms of applications, the DMG563H10R is suitable for applications where space and power saving solutions are needed such as in AC phase controllers, electric heating, power supply, and in electric fans. Moreover, this device is designed for use in all types of space-constrained, high voltage and high current circuits.
The DMG563H10R uses a multi-gate architecture to provide high drive capability, wide operating temperature range and fast response times. The core part of the device is an NPN transistor. The NPN transistor is set in an array and the array is divided into two half circuits, one on the left and one on the right. Each half circuit is controlled by one separate gate signal. With this design, high gain and low power consumption can be achieved.
At the heart of the DMG563H10R is the multi-gate switching technology. This technology allows the device to operate at high speed and high efficiency. This technology also offers low losses and fewer switching stages. In combination with the pre-biased design of the device, the DMG563H10R can operate with a wide supply voltage and can provide high output current rates. Moreover, the DMG563H10R offers short circuit protection, thermal protection and a low peak-to-peak noise level.
In conclusion, the DMG563H10R is a versatile and reliable Bipolar Junction Transistor pre-biased array optimized for power switching applications. It combines the benefits of a wide supply voltage, high output current capability and reliable operation with the advantages of a pre-biased design, such as simple gate-level inputs and low power consumption. This device is ideal for applications where space and power saving solutions are needed.
The specific data is subject to PDF, and the above content is for reference
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