DMG563H10R Allicdata Electronics
Allicdata Part #:

DMG563H10RTR-ND

Manufacturer Part#:

DMG563H10R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN/PNP SMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: DMG563H10R datasheetDMG563H10R Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms, 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms, 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: --
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: SMini5-F3-B
Base Part Number: DMG563
Description

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  • DMG563H10R Application Field and Working Principle

The DMG563H10R is a type of Bipolar Junction Transistor (BJT) array, pre-biased and optimized for power switching applications. This MJT array combines NPN transistors and pre-set gate-level inputs to provide a reliable and easy to use solution for electronic energy control. The DMG563H10R operates with a wide supply voltage and a high output current capability.

In terms of applications, the DMG563H10R is suitable for applications where space and power saving solutions are needed such as in AC phase controllers, electric heating, power supply, and in electric fans. Moreover, this device is designed for use in all types of space-constrained, high voltage and high current circuits.

The DMG563H10R uses a multi-gate architecture to provide high drive capability, wide operating temperature range and fast response times. The core part of the device is an NPN transistor. The NPN transistor is set in an array and the array is divided into two half circuits, one on the left and one on the right. Each half circuit is controlled by one separate gate signal. With this design, high gain and low power consumption can be achieved.

At the heart of the DMG563H10R is the multi-gate switching technology. This technology allows the device to operate at high speed and high efficiency. This technology also offers low losses and fewer switching stages. In combination with the pre-biased design of the device, the DMG563H10R can operate with a wide supply voltage and can provide high output current rates. Moreover, the DMG563H10R offers short circuit protection, thermal protection and a low peak-to-peak noise level.

In conclusion, the DMG563H10R is a versatile and reliable Bipolar Junction Transistor pre-biased array optimized for power switching applications. It combines the benefits of a wide supply voltage, high output current capability and reliable operation with the advantages of a pre-biased design, such as simple gate-level inputs and low power consumption. This device is ideal for applications where space and power saving solutions are needed.

The specific data is subject to PDF, and the above content is for reference

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