Allicdata Part #: | DMG564H30RTR-ND |
Manufacturer Part#: |
DMG564H30R |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN/PNP SMINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | DMG564H30R Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.08448 |
6000 +: | $ 0.07936 |
15000 +: | $ 0.07424 |
30000 +: | $ 0.06827 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms, 1 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms, 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V / 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | SMini6-F3-B |
Base Part Number: | DMG564 |
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The DMG564H30R application field and working principle are ideal for use in modern electronic systems. Pre-biased arrays offer a higher control level that can dramatically increase the performance of the system. DMG564H30R is a pre-biased four N-channel MOSFET array, specially designed to provide matched gate and source resistance. The device includes a PTC (Positive Temperature Coefficient) device which senses the maximum power dissipation of the device and reduces the gate current to prevent thermal runaway. The four channels are individually pinned and connected to separate positive and negative gate inputs.
The DMG564H30R is designed for low-side MOSFET drivers. It features an integrated PTC for thermal protection, which reduces the gate current to prevent the device from reaching thermal runaway. The DMG564H30R has a very low on-resistance (RDSON) of 30mOhms and its rated voltage of 30V allows it to be driven by modern logic supply voltages. The built-in positive temperature coefficient device acts as a safety feature, which increases the gate resistance as the temperature increases. This reduces the current through the device, thus preventing it from overheating.
The DMG564H30R can also be used as an active-low power switch with built-in thermal protection. It features an integrated PTC for protection against excessive power dissipation. The PTC reduces the gate current to prevent the device from reaching thermal runaway. The DMG564H30R has low-on-resistance (RDSON) of 30mOhms and its rated voltage of 30V allows it to be driven by modern logic supply voltages. It also includes an integrated pull-up/pull-down network of resistors, which reduces the output current and makes the device ESD safe.
The DMG564H30R operates with a single supply voltage and a supply current of 10µA. It is also equipped with an internal temperature range sensing circuit which helps protect the device against thermal runaway by limiting the amount of gate current. Additionally, the device includes a disable pin, which can be used to put the device into a low-power state. This feature can be used to save power for battery-powered applications.
The DMG564H30R is suitable for applications such as switch-mode power supplies, battery-operated systems, automotive applications, and other industrial control circuits. It is also available in a single channel configuration, allowing users to utilize the device in a variety of applications. The DMG564H30R is a highly integrated device, offering a cost-effective solution for low-side MOSFET driver designs.
The specific data is subject to PDF, and the above content is for reference
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