Allicdata Part #: | DMG563H40RTR-ND |
Manufacturer Part#: |
DMG563H40R |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN/PNP SMINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | DMG563H40R Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06299 |
6000 +: | $ 0.05949 |
15000 +: | $ 0.05424 |
30000 +: | $ 0.05074 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms, 510 Ohms |
Resistor - Emitter Base (R2): | 10 kOhms, 5.1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V / 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 5-SMD, Flat Leads |
Supplier Device Package: | SMini5-F3-B |
Base Part Number: | DMG563 |
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Transistors are electronic devices that are used to control the flow of electric current. DMG563H40R Arrays, Pre-Biased Transistors are a type of Bipolar Junction Transistor (BJT) that are pre-biased and designed for use in high voltage and high speed applications. This article will discuss the application field and working principle of DMG563H40R transistor arrays.
Application Field
The DMG563H40R transistor array is mainly used in high voltage and high speed applications such as high frequency power amplifiers, switch mode power supplies, logic circuits and motor control. These transistors are capable of delivering high power and high voltage outputs with low turn-on and turn-off times, making them ideal for applications such as controlling the speed of a motor or switching power supply outputs.
The DMG563H40R transistors can also be used in voltage regulation, linear and switching power supplies, push-pull configurations and audio amplifiers. Additionally, they are widely used in high-voltage switch mode circuits, voltage amplifiers, switching regulators, and current amplifiers.
Working Principle
The DMG563H40R transistor array is so-called because it is composed of two transistors connected in series. The two transistors are held in a symmetrical position with their base-emitter junctions connected in the middle. A high current flow will be obtained when the base-emitter junction of one transistor is forward-biased and the other transistor is reverse-biased. The resulting current we get is a combination of both transistors.
The base of the first transistor is connected to a voltage source, while the base of the second transistor is connected to ground. As the voltage applied to the first transistor\'s base increases, the current flowing through the device increases. At the same time, as the voltage applied to the second transistor\'s base decreases, the current through the device decreases. This arrangement allows for precise control of the current flowing through the device.
An external current-limiting resistor is sometimes connected in series with the DMG563H40R transistor array to limit the amount of current draw. This is done to ensure that the transistors are protected from any sudden changes in current. This current-limiting resistor can also be used to increase the gain of the device, by allowing for a larger voltage drop across the transistors.
The DMG563H40R transistor array is capable of operating in high frequencies, as the applied voltage is controlled and the current is limited. This allows for fast switching of the transistors, which make them ideal for high-speed signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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