Allicdata Part #: | DMG563H50RTR-ND |
Manufacturer Part#: |
DMG563H50R |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN/PNP SMINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | DMG563H50R Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.08295 |
6000 +: | $ 0.07792 |
15000 +: | $ 0.07290 |
30000 +: | $ 0.06703 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms, 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD (5 Leads), Flat Lead |
Supplier Device Package: | SMini5-F3-B |
Base Part Number: | DMG563 |
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DMG563H50R is a part of family of array transistors, mainly classified as Bipolar Junction Transistors(BJTs) and more specifically as a Pre-Biased transistor array. A DMG563H50R is an 8 gate array designed to minimize the crosstalk in electronic circuits.
The DMG563H50R is an integrated circuit that consists of an array of 8 independent CJT transistors. Each transistor is pre-biased to maximize speed and minimize switching noise. This pre-biased configuration provides additional benefits beyond those of a traditional single BJT transistor such as higher switching speeds, lower power consumption, and increased reliability. The DMG563H50R can be used in a variety of applications, however, its primary application is in communications and digital logic applications.
The working principle of the DMG563H50R is based on that of a BJT transistor. A BJT is composed of three layers; one layer is made up of electrons, one layer is made up of holes, and the third layer is made up of a semi-insulator. The DMG563H50R is an 8 gate array that consists of 8 independent BJT transistors. The 8 gates are then connected in a way to minimize crosstalk between the transistors. The DMG563H50R uses the same working principle as a regular BJT transistor; electricity is passed through the base to produce a current across the collector and emitter.
The DMG563H50R integrates 8 BJT transistors into a single package, which provides many advantages to its users. The most important advantage is that it allows for the integration of multiple transistors and their associated circuitry into a single package. This simplifies the design process and reduces the amount of printed circuit board area needed. Additionally, by combining multiple transistors into a single package reduces power consumption and can improve signal integrity and speed. The pre-biased configuration also increases the signal throughput and reliability.
The DMG563H50R, as an 8 gate pre-biased BJT transistor array, is an ideal solution for communications and digital logic applications. Its pre-biased configuration minimizes crosstalk, which is a common issue in these types of applications, and it can increase throughput, reduce power consumption, and improve signal integrity. Additionally, its integration of 8 transistors into a single package simplifies the design process and reduces the amount of printed circuit board area needed. Thus, the DMG563H50R is a great option for any design that requires multiple transistor and circuitry in a single package.
The specific data is subject to PDF, and the above content is for reference
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