Allicdata Part #: | DMG564010RTR-ND |
Manufacturer Part#: |
DMG564010R |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN/PNP SMINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | DMG564010R Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.08295 |
6000 +: | $ 0.07792 |
15000 +: | $ 0.07290 |
30000 +: | $ 0.06703 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Base Part Number: | DMG56401 |
Supplier Device Package: | SMini6-F3-B |
Package / Case: | 6-SMD, Flat Leads |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMG564010R is a high-powered vertical NPN array of BJT transistors that offers many unique features and is suitable for a wide variety of applications. This product provides a compact, low-profile design with excellent thermal management, and high-current switching capability.
The DMG564010R offers superior thermal management and enhanced longevity thanks to its thin-film heat spreader. This device\'s thin-film heat spreader helps reduce hot-spots and thermal mismatching while providing a low thermal resistance path that bypasses standard PN junction thermal barriers.
The DMG564010R\'s high-current switching capability makes it ideal for high power and motor drive applications. In addition, its low-profile design and compact size allow it to be used in cramped or limited space applications. This device also has a wide range of application fields, from power management and motor control to general-purpose switching.
The DMG564010R\'s working principle is based on the vertical NPN transistor array layout. The device is built from multiple NPN transistors stacked vertically and connected in parallel for high current output. The NPN transistors are connected together in a common emitter configuration, allowing each transistor to switch on and off independently.
The DMG564010R is pre-biased, meaning it requires no external input voltage in order to operate. This pre-biased configuration reduces the need for additional external circuitry, simplifying the implementation of the device. Additionally, the pre-biased arrangement helps reduce power consumption by eliminating unnecessary cycling of transistors.
The DMG564010R is a highly efficient and powerful device that is suitable for a variety of applications. It offers excellent thermal management and high-current switching, and its pre-biased configuration simplifies implementation and reduces power consumption. Its high-power, low-profile design and wide variety of application fields make the DMG564010R a valuable addition to any power management or motor control project.
The specific data is subject to PDF, and the above content is for reference
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