DMG564040R

Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	6-SMD, Flat Leads
Supplier Device Package:	SMini6-F3-B
Base Part Number:	DMG56404
Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V

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DMG564040R Application Field and Working Principle

The DMG564040R is an innovative transistor array integrated circuit offered by DISCO Corporation. It provides users a wide range of benefits, such as the ability to operate in high-frequency applications, low power consumption and excellent total harmonic distortion performance. The DMG564040R offers users an unprecedented level of performance and reliability in a single package.The DMG564040R is a pre-biased bipolar (BJT) transistor array integrated circuit that is often used in RF and high-frequency applications. The device is offered in a 16-pin SOT-25 package, with a supply voltage range of 1.5 to 5V. It offers users a wide range of advantages, such as low power consumption, high linearity, high noise figure and total harmonic distortion (THD) performance. The DMG564040R also supports a wide frequency range up to 6.5GHz, making it ideal for high-speed data transmission.The DMG564040R features a unique combination of features and benefits that make it one of the most reliable and efficient transistor array integrated circuits available. Its high speed and high frequency capabilities make it well-suited for applications requiring precise signal transmission and processing. The device uses a common-source configuration and offers linearity of 40dBm and 0.68dB NF at 1.3GHz and 0.7@ 0.455GHz respectively. The device also comes with an on-chip ESD protection circuit that allows it to survive accidental static discharge with no permanent damage.The device also has a pre-biased differential amplifier circuit, allowing it to provide high input-output gain for low-noise applications. The DMG564040R also features a total harmonic distortion (THD) of -66dBc at 1GHz and -63dBc at 0.455GHz. This allows the device to accurately process signals over a wide frequency range, ensuring precise control over the signal\'s quality.The DMG564040R also includes an amplifier circuit that allows it to operate in two different modes: class B and class AB. In class B, the output voltage is not limited, allowing the device to reach maximum power output. In class AB, the output voltage is limited, which reduces cross-over distortion and helps maintain uniformity across the output signal.Overall, the DMG564040R is a highly versatile transistor array integrated circuit that offers users high performance and reliability in a range of applications. It is suitable for applications requiring precise signal transmission and processing, such as RF and high-frequency data transmission. Its low power consumption and excellent total harmonic distortion performance make it an ideal choice for low-noise applications, making it an ideal choice for a wide range of applications.

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