DMG5802LFX-7 Allicdata Electronics
Allicdata Part #:

DMG5802LFX-7DITR-ND

Manufacturer Part#:

DMG5802LFX-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 24V 6.5A 6DFN
More Detail: Mosfet Array 2 N-Channel (Dual) Common Drain 24V 6...
DataSheet: DMG5802LFX-7 datasheetDMG5802LFX-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V
Power - Max: 980mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VFDFN Exposed Pad
Supplier Device Package: W-DFN5020-6
Description

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The DMG5802LFX-7 is a high-performance, low-power, field-effect transistor (FET) array which can be used in a wide variety of applications. It features an ultra-low on-resistance of only 2 ohms, a maximum voltage rating of 20 volts, and it is available in a wide range of package sizes. The DMG5802LFX-7 is suitable for use in switching, signal buffering, signal level conversion, and general-purpose applications, as well as for power supplies, motor control, RF, analog, and digital signal processing.

The DMG5802LFX-7 is made up of two 8-channel FET arrays, each with two N-channel enhancement logic level-controlled FETs. These FETs are connected in parallel, with each of the two FETs connecting two channels to create a 16-channel array. The FETs are designed for ESD protection applications and for switching between different voltage levels. Each channel independently monitors and controls the gate voltage and channel current.

The DMG5802LFX-7 operates on a +5 V power supply and supports a wide range of load currents, from 1 A up to 15 A. The FETs are stable under all conditions, and each channel can be independently enabled and disabled, allowing current limiting and control of temperature rise. The FETs have high-speed input and output switching, with a maximum operating frequency of 8 MHz.

The DMG5802LFX-7 features an integrated logic level gate drive, meaning it can be driven directly from logic signals. The logic levels are 5 V and 0 V and the gate drive has a minimum switching frequency of 200 kHz. Additionally, the FETs have an integrated voltage clamp for protection against overvoltage conditions. All of these features make the DMG5802LFX-7 suitable for a variety of applications, such as LED illumination, motor control, power supplies, and data communications.

The operating principle of the DMG5802LFX-7 is straightforward. When a logic signal is applied to one of the channels, an electrical field is created between the gate and the source. This electrical field controls the amount of current which can flow through the channel. By controlling the voltage between the gate and the source, the FET can be turned on or off, regulating the amount of current flowing through the channel.

The DMG5802LFX-7 is an excellent choice for a variety of applications. It is cost-effective, power-efficient, and it offers high-performance in a wide range of scenarios. Additionally, the integrated logic level gate drive and its range of package sizes make it an ideal choice for a variety of projects, from motor control and data communications to power supplies and LED lighting.

The specific data is subject to PDF, and the above content is for reference

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