DMG7401SFG-13

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A Field effect transistor (FET) is a transistor that uses an electric field to control the flow of current. FETs are often used as amplifiers and are widely used in electronics due to their low power consumption, low noise characteristics and high input resistance. The DMG7401SFG-13 is a N-channel enhancement mode MOSFET (metal oxide semiconductor field-effect transistor) developed by Novasic Corporation specifically for high-frequency switching and RF applications.

The device is packaged in a small, surface mount, leadless 12-pin package that is excellent for high-frequency applications, with highly advanced gate oxide technology achieving a lower RDS (on) at higher temperatures. The DMG7401SFG-13 is capable of providing up to 192 Watts at 30 V, with a typical avalanche energy of 9.4 mJ at 15 V.

The DMG7401SFG-13 is primarily used for high-frequency active switch and communication functions, such as Wi-Fi, Bluetooth and ZigBee radios. It can also be used for other power switching applications where the designers need to minimize power loss, such as motor control, acoustic devices, medical equipment and electronic devices. The device’s N-channel MOSFET structure allows for smaller switching losses and higher operating frequency than traditional devices, making it ideal for high speed on/off switch applications. The DMG7401SFG-13 also features great on-state resistance and low gate source voltage, allowing for an improved design of power supply in applications such as switching regulators and DC/DC converters.

The working principle behind the DMG7401SG-13 is based on the same idea of other FETs- when a positive voltage is applied to the Gate, the MOSFET is turned on (enhancement mode) and current flows from the Drain to the Source. The amount of current that flows is proportional to the amount of Gate voltage applied. When the Gate voltage becomes slightly negative, the MOSFET is turned off and no current flows. In this way, the DMG7401SFG-13 can act as a high speed, low loss on/off switch in wireless applications and electronic devices.

In conclusion, the DMG7401SFG-13 is a N-channel enhancement mode MOSFET developed by Novasic Corporation specifically for high-frequency switching and RF applications. The device is capable of providing up to 192 Watts at 30 V, with low on-state resistance and low gate source voltage. It is primarily used for high-frequency active switch and communication functions such as Wi-Fi, Bluetooth and ZigBee, as well as for other power switching applications. The working principle of the DMG7401SFG-13 is based on that of other FETs, allowing it to act as a high speed, low loss on/off switch in various applications.

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