DMG7702SFG-7 Allicdata Electronics
Allicdata Part #:

DMG7702SFG-7DITR-ND

Manufacturer Part#:

DMG7702SFG-7

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 12A PWRDI3333-8
More Detail: N-Channel 30V 12A (Ta) 890mW (Ta) Surface Mount Po...
DataSheet: DMG7702SFG-7 datasheetDMG7702SFG-7 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.14038
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: PowerDI3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 890mW (Ta)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMG7702SFG-7 is an enhancement-mode n-channel MOSFET. It’s specifically designed for applications that require high-performance power conditioning, such as motor control, lighting control, and heavy-duty automotive applications. It is a power semiconductor device with integrated protection functions that are optimized for high-voltage operation.

DMG7702SFG-7 is a high-voltage MOSFET that provides durability and reliability in a powered device.

The device has drain current handling capability up to 1.3A and on-state resistance of 8 ohms. It can handle up to 25V of drain-to-source voltage.

The DMG7702SFG-7 has a rugged metal package design. This device is offered in two different configurations, which are the dual-die configuration and the flip-chip configuration.

In addition to providing high-performance handling and reliability, the DMG7702SFG-7 is designed to reduce the electrical noise generated from other components in the circuit, minimizing electromagnetic compatibility (EMC).

Applications include automotive, motor control, lighting, and power conditioning.

Working Principle

The main function of the DMG7702SFG-7 is to control the current between its source and drain terminals. It does this by acting as a switch, allowing current to flow in only one direction when an appropriate voltage is applied at the gate.

This device is built to operate in enhancement mode, meaning that it requires a positive voltage applied to the gate in order to open the switch, allowing the current to flow. If the voltage applied to the gate is lowered below a certain threshold, typically 0V, the switch will close and the current will be blocked.

The DMG7702SFG-7 also includes protection features that help to protect the device from overvoltage and current surges. This includes an overvoltage protection circuit on the gate, which will automatically shut off the device if the gate voltage becomes excessively high.

The DMG7702SFG-7 is also designed to reduce switching losses in the circuit by reducing the amount of time that it takes for the device to turn on and off. This is accomplished by reducing the rise and fall times of the device.

In summary, the DMG7702SFG-7 is a high-voltage MOSFET that is designed for applications that require high-performance power conditioning. It is capable of handling up to 1.3A of current and is able to handle up to 25V of drain-to-source voltage. It includes protection features that help to protect the device from damage due to overvoltage and current surges. Finally, it is designed to reduce switching losses in the circuit by reducing the rise and fall times of the device.

The specific data is subject to PDF, and the above content is for reference

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