DMG7702SFG-13

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	PowerDI3333-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	890mW (Ta)
FET Feature:	Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds:	4310pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14.7nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	10 mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMG7702SFG-13 is a high-performance field-effect transistor (FET) designed to deliver excellent performance in a range of applications. It is part of a family of devices designed to provide high current and low voltage operation in a wide array of applications. The DMG7702SFG-13 is a single-gate metal oxide semiconductor field-effect transistor (MOSFET) and is capable of high-current operation up to 30A. Its low on-resistance allows for efficient power transfer, making it suitable for high-power applications. The DMG7702SFG-13 is an ideal choice for a variety of applications such as power supplies, audio amplifiers, and automotive electronics.The DMG7702SFG-13 is a unipolar, depletion-mode type of FET. In this type of device, the conductivity of the channel between the source and the drain is controlled by the voltage applied to the gate. When a negative voltage is applied to the gate, the channel is open and the device conducts. When no voltage is applied to the gate, the channel is closed and the device is off. The DMG7702SFG-13 has an impressive breakdown threshold of 12V, making it suitable for high-voltage applications.In addition to its high performance, the DMG7702SFG-13 also offers an advanced thermal design. This ensures that the device remains stable in operation even under extreme thermal conditions. Additionally, the DMG7702SFG-13 can withstand an operating temperature range of -65°C to 150°C, making it suitable for use in a wide range of environmental conditions.The DMG7702SFG-13 offers a number of advantages over other MOSFETs, including its high reliability, low on-resistance, and high breakdown voltage. These features, combined with its advanced thermal design, make it an ideal choice for a variety of challenging applications. With the right selection of other components and board design, the DMG7702SFG-13 can provide a reliable, high-performance solution for any power management task.All in all, the DMG7702SFG-13 is a powerful MOSFET designed to operate reliably in a wide range of environmental and operating conditions. Its high current and voltage operation, along with its advanced thermal design, make it an ideal choice for a variety of power management tasks. This makes it an excellent choice for power supplies, audio amplifiers, and automotive electronics, as well as a range of other applications. As such, the DMG7702SFG-13 is an excellent addition to any electronics engineer\'s toolbox.

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