DMG7401SFGQ-13

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DMG7401SFGQ-13 are N-channel depletion-type MOS field-effect transistors (FETs) that have a wide range of uses in circuits such as amplifiers and switches. They have a relatively low drain-source voltage (VDS) of 10V and can handle a large amount of power without overheating. The FETs are capable of operating at high frequencies, allowing their use in radio-frequency (RF) applications. With their small size and low power consumption, they are ideal for use in small circuits.

The DMG7401SFGQ-13 are designed specifically for use in digital circuits. They can handle high-speed switching with minimal distortion and provide reliable operation in digital systems. The FETs are well-suited for digital logic applications, such as USB switches, and can be used to drive LEDs at high currents. They can also be used to power high-impedance loads, such as display panels.

The DMG7401SFGQ-13 boast a wide range of features that make them an optimal choice for a variety of applications. They are rated for a total gate charge of 13 nC and an effective channel resistance of 10 ohms. The transconductance (gm) is specified at 2400 µS, and the gate-drain resistance (rds) is rated at 5 ohms. The breakdown voltage (BVDSS) is rated at +-30V. The FETs have a thermal resistance of 9.4 K/W, enabling them to dissipate a large amount of heat.

The working principle of the DMG7401SFGQ-13 involves controlling the current flow between the source and drain. The source is connected directly to the gate, while the drain is connected to a voltage source. When a voltage is applied to the gate of the FET, an electric field is generated which attracts the source electrons towards it. This causes the source-drain current to flow, creating an internal drain-source path. By controlling the gate voltage, the source-drain current can be controlled, allowing the FET to be used as a switch or amplifier.

The DMG7401SFGQ-13 FETs are popular for their versatility and are widely used in a variety of applications, from industrial controls to communication equipment, from test equipment to automotive electronics. Additionally, their small size, low power consumption and reliable operation make them ideal for use in mobile devices, such as tablets and smartphones. Their low VDS of 10V means that they can be safely used in circuits without worrying about damaging components.

The DMG7401SFGQ-13 FETs offer an excellent combination of features and performance that make them perfect for applications where size and power consumption are at a premium. Their low VDS and thermal resistance mean that they can be used in high-frequency applications, allowing them to be used in digital circuits, as well as RF circuits. With their versatile range of features, they can be used in a wide range of applications, making them a popular choice among engineers.

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