Allicdata Part #: | DMP510DL-13DI-ND |
Manufacturer Part#: |
DMP510DL-13 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 50V 0.18A SOT23 |
More Detail: | P-Channel 50V 180mA (Ta) 310mW (Ta) Surface Mount ... |
DataSheet: | DMP510DL-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03698 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 310mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 24.6pF @ 25V |
Vgs (Max): | ±30V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 100mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 180mA (Ta) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMP510DL-13 is a single depletion-mode power MOSFET device in a very small, surface mount, leadless, very thin and flat exposed pad (EP) package. It is specifically designed and packaged to provide enhanced power MOSFET compatibility in the high-speed and atto-current applications which need to minimize device parasitics. It provides low on-resistance, fast switching, and low gate charge characteristics that can significantly reduce power output stage losses. The device has a built-in integrated-diode body diode to protect against transient load switch over.
This device can be used in many applications including high-speed switching, high-finesse velocity modulation, synchronized Class-D Amplifier, DC/DC regulators, low drop-out (LDO) regulator, battery-powered regenerative amplifier, switched-mode power supplies, and automotive electronic systems.
The DMP510DL-13 is a very efficient MOSFET for high speed and low power operations. It has a maximum drain current of 15 amperes with an on-resistance rating of 0.00085 ohms. Its drain to source breakdown voltage rating is 600 V, which can be used in the high voltage operations. The device is also well suited for audio, video and even power amplifier applications. It also has an extremely low gate charge characteristic that can reduce power output stage losses.
The device works on the principle of depletion-mode power MOSFET, which uses a process known as drain modulation to control the device current. This process uses a reverse-biased gate-to-source voltage to oppose the applied drain-to-source voltage and inhibits the device current. The MOSFET is turned on by applying a positive gate-to-source voltage, which creates an inversion layer between drain and source and allows a drive current to flow from drain to source. When the gate voltage is reduced or removed, the reverse-biased voltage opposes the applied drain-to-source voltage, depleting the inversion layer, and the device is turned off. This device also has built-in body diode protection against transient load switch-over.
The small surface mount package of the DMP510DL-13 is ideal for small form factor systems. The device has built-in integrated body diode protection that is well suited for high current high frequency applications. Additionally, the device is designed to be virtually insensitive to electrostatic discharge (ESD) making it robust and reliable. Also, its flat, exposed pad package can be easily soldered in high-speed operation.
The DMP510DL-13 is an ideal device for high-speed, low-power operations. It has a low on-resistance rating of 0.00085 ohms, high drain current rating of 15 amperes, and high reverse breakdown voltage rating of 600 V. Its built-in body diode protection provides efficient transient load switchover and its low gate charge characteristic reduces power output losses. The DMP510DL-13 is packaged in a very small surface-mount leadless exposed-pad (EP) package, making it well suited for small form factor systems.
The specific data is subject to PDF, and the above content is for reference
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