Allicdata Part #: | DMP58D0LFB-7DITR-ND |
Manufacturer Part#: |
DMP58D0LFB-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 50V 0.18A DFN1006-3 |
More Detail: | P-Channel 50V 180mA (Ta) 470mW (Ta) Surface Mount ... |
DataSheet: | DMP58D0LFB-7 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | 3-UFDFN |
Supplier Device Package: | 3-DFN1006 (1.0x0.6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 470mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 27pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 100mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 180mA (Ta) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMP58D0LFB-7 by ON Semiconductor is a low-gate charge N-Channel Enhancement Mode MOSFET which has been developed having low on-state resistance and logic level switching. It is available in a small 3x2TSOP-8 package and can replace the more expensive and higher RDS(ON) devices that are typically used in applications where both high speed switching and low gate charge are important.
The DMP58D0LFB-7 MOSFET is a type of FET (Field Effect Transistor) which can be used for variety of applications. One of the primary use of the device is to switch power from the power source to the load. This kind of switching is typically used in switching power supplies and circuit protection.
The DMP58D0LFB-7 MOSFET works on the principle of the Field-Effect Transistor where the output of the transistor is controlled by the input voltage applied to the gate terminal. When a voltage is applied to the gate, it creates an electric field across the channel which causes the channel to conduct current between the drain and the source.
The maximum drain-source voltage of the device is 100V and the maximum drain current is 58A. The low gate charge of the device is especially suited for high speed switching and it can switch off in a short time, thus making it ideal for high speed applications.
The device is widely used in high power applications such as motor controllers and for motor drive circuits. It is also ideal for general purpose switching applications as it can work with a wide range of input voltages, ranging from 3V to 18V.
The DMP58D0LFB-7 MOSFET is also widely used in power supplies and battery chargers, as it can switch from high current to low current quickly. In addition, it can provide the optimal switching speeds for high power applications.
The DMP58D0LFB-7 MOSFET is a versatile device that has many applications in various industries. It is especially suitable for applications where both high speed switching and low gate charge are important.
The specific data is subject to PDF, and the above content is for reference
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